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Oxide and Hot Carrier Reliability Studies for Strained Si-on Relaxed SiGe MOS Devices

著者名:
Joshi, S.
Ahmad, D.
Palard, M.
Kelly, D.
Onsongo, D.
Dey, S.
Fei, L.
Torack, T.
Seacrist, M.
Kellerman, B.
Banerjee, S.K.
さらに 6 件
掲載資料名:
Silicon nitride, silicon dioxide thin insulating films, and other emerging dieletrics VIII : proceedings of the international symposium
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
2005-01
発行年:
2005
開始ページ:
353
終了ページ:
362
総ページ数:
10
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774598 [1566774594]
言語:
英語
請求記号:
E23400/200501
資料種別:
国際会議録

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