Gas Source Molecular Beam Epitaxy Studies of the Initial Stages of Diamond and Silicon Carbide Growth using Methyl Radicals and Molecular Hydrocarbon Species | 東京工業大学附属図書館文献データベース

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Gas Source Molecular Beam Epitaxy Studies of the Initial Stages of Diamond and Silicon Carbide Growth using Methyl Radicals and Molecular Hydrocarbon Species

著者名:

Lannon, J.S. ( MCNC, Raleigh, NC )
Gold, J.S. ( West Virginia University, Morgantown, WV )
Stinespring, C.D. ( West Virginia University, Morgantown, WV )
Tolani, V.L. ( West Virginia University, Morgantown, WV )
Ziemer, K.S. ( West Virginia University, Morgantown, WV )

掲載資料名:

AIChE 1999 ANNUAL MEETING

シリーズ名:

AIChE meeting [papers]

シリーズ巻号:

1999

発行年:

1999

ペーパー番号:

170t

総ページ数:

9

出版情報:

New York: American Institute of Chemical Engineers

言語:

英語

請求記号:

A08000

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015170
シリーズID:	PA00000179
会議名:	AIChE Annual Meeting
回次:	1999
会議開催地:	Dallas, TX, USA
会議開催年:	1999.10.31-1999.11.05
論文注記:	Fiche 49

類似資料:

1 国際会議録 Studies of the Initial Stages of Silicon Carbide Growth Using Molecular Hydrocarbon and Methyl Radical Gas Species Gold, J. S., Lannon, J. S. Jr., Tolani, V. L., Ziemer, K. S., Stinespring, C. D. Trans Tech Publications	7 国際会議録 A Study of Mixed Group-V Nitrides Grown by Gas-Source Molecular Beam Epitaxy Using a Nitrogen Radical Beam Source Bi, W. G., Tu, C. W., Mathes, D., Hull, R. MRS - Materials Research Society
2 国際会議録 INITIAL STAGE OF HETEROEPITAXIAL GROWTH OF SiC ON Si BY GAS SOURCE MBE USING HYDROCARBON RADICALS Fuyuki, Takashi, Tarui, Yoichiro, Hatayama, Tomoaki, Matsunami, Hiroyuki MRS - Materials Research Society	8 国際会議録 Gas-source molecular beam epitaxy growth and characterization of GaNP/GaP structures Xin, H. P., Tu, C. W. MRS-Materials Research Society
3 国際会議録 GAS SOURCE SILICON MOLECULAR BEAM EPITAXY Hirayama, H., Hiroi, M., Koyama, K., Tatsumi, T., Sato, M. Materials Research Society	9 国際会議録 Gas Source Molecular Beam Epitaxy Panish B. M. Plenum Press
4 国際会議録 THE INFLUENCE OF RECONSTRUCTION ON THE INITIAL STAGES OF SILICON MOLECULAR BEAM EPITAXY Gossrnann, H.-J., Feldman, L.C. Materials Research Society	10 国際会議録 Growth of AIN on 6H- and 4H-SiC by Gas-Source Molecular Beam Epitaxy Jarrendahl,K., Smith,S.A., Zheleva,T., Kern,R.S., Davis,R.F. Trans Tech Publications
5 国際会議録 Role of Ions in Bias Enhanced Nucleation of Diamond Lannon, J. M., Jr., Gold, J. S., Stinespring, C. D. MRS - Materials Research Society	11 国際会議録 Growth of SiC on 6H-SiC {0114} Substrates by Gas Source Molecular Beam Epitaxy Nakamura, S., Hatayama, T., Kimoto, T., Fuyuki, T., Matsunami, H. Trans Tech Publications
6 国際会議録 Initial Stage of Crystallization in the Growth of Silicon Carbide on Substrate with Micropipes Khlebnikov, I. I., Cherednichenko, D. I., Khlebnikov, Y., Sudarshan, T. S. Trans Tech Publications	12 国際会議録 A TEM INVESTIGATION OF THE INITIAL STAGES OF InSB GROWTH ON GaAS (001) BY MOLECULAR BEAM EPITAXY Zhang, X., Staton-Bevan, A.E., Pashley, D.W. Materials Research Society

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