Effect of Process Conditions on Gas-Phase Decomposition of Nitrous Oxide in Furnace Oxynitridation of Silicon | 東京工業大学附属図書館文献データベース

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Effect of Process Conditions on Gas-Phase Decomposition of Nitrous Oxide in Furnace Oxynitridation of Silicon

著者名:

Singhvi, Shri ( School Of Purdue University, West Lafeyette, IN )
Dang, Sanjit Singh ( University of Illinois at Chicago, Chicago, IL )
Rupangudi, Ramana V. ( University of Illinois at Chicago, Chicago, IL )
Takoudis, Christos G. ( University of Illinois at Chicago, Chicago, IL )

掲載資料名:

AIChE 1998 ANNUAL MEETING

シリーズ名:

AIChE meeting [papers]

シリーズ巻号:

1998

発行年:

1998

ペーパー番号:

197ao

総ページ数:

2

出版情報:

New York: American Institute of Chemical Engineers

言語:

英語

請求記号:

A08000

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015168
シリーズID:	PA00000179
会議名:	AIChE Annual Meeting
回次:	1998
会議開催地:	Miami Beach, FL, USA
会議開催年:	1998.11.15-1998.11.20
論文注記:	Fiche 115

類似資料:

1 国際会議録 Growth of Silicon Suboxide Layer Above An Atomically Abrupt SiO2/Si(100) Interface in Conventional Furnace Oxynitridation Using N2O Ambients Pennycook, Stephen J., Browning, Nigel D., Dang, SANJIT S., Duscher, GERD, Rupangudi, Ramana V., Takoudis, Christos G., … American Institute of Chemical Engineers	7 国際会議録 Low Temperature Oxynitridation Of SiGe In NO/N2O Ambients Dasgupta, Anindya, Takoudis, Christos G. Materials Research Society
2 国際会議録 Furnace Silicon Oxynitridation in Nitrous Oxide Ambients Singhvi, S., Takoudis, C.G. Electrochemical Society	8 国際会議録 On the Silicon Suboxide Layer Above an Atomically Abrupt Silicon Oxide/Si(100) Interface in N2O Furnace Oxidation Dang, S.S., Duscher, G., Browning, N.D., Pennycook, S., Takoudis, C.G. Electrochemical Society
3 国際会議録 Process improvements for reductions in total charge and interface trap densities of thermally-grown sub-3.5nm-thick silicon nitrides Dang, Sanjit Singh, Takoudis, Christos G. MRS-Materials Research Society	9 国際会議録 Process-Structure Relationships of Nitrided Oxides and Oxynitrides Dasgupta, Anindya, Takoudis, Christos G. Materials Research Society
4 国際会議録 Angle-resolved XPS studies of interfacial bonding states in silicon oxynitrides fabricated using different thermal methodologies Dang, Sanjit Singh, Takoudis, Christos G. MRS-Materials Research Society	10 国際会議録 (213e) Structural-Dielectric Property Relation From Compositional Tuning of ALD Deposited Yttrium-Stabilized Hafnium Oxide Films Qian Tao Sr., Gregory Jursich, Manish Singh, Christos G. Takoudis American Institute of Chemical Engineers
5 国際会議録 Variation in the Silicon Oxynitridation Process Along a Furnace Length Dang, S.S., Takoudis, C.G. Electrochemical Society	11 国際会議録 Metalorganic Chemical Vapor Deposition of Aluminum Oxide on Silicon Nitride Dasgupta, Anindya, Chowdhuri, Abhijit Roy, Takoudis, Christos G. Materials Research Society
6 国際会議録 Low Temperature Si0.85Ge0.15 Oxynitridation in Wet-Nitric Oxide Ambient Dasgupta, Anindya, Takoudis, Christos G. Materials Research Society	12 国際会議録 142bc. Adsorption and Dissociation Kinetics of Dichlorosilane on Silicon Surface Deepthi Gopireddy, Christos G. Takoudis American Institute of Chemical Engineers

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