Blank Cover Image

Deposition of Device-Quality Dielectric Thin Films by Remote Plasma-Enhanced Chemical-Vapor Deposition (RPECVD) and Rapid Thermal Annealing (RTA)

著者名:
  • Lucovsky, G. ( North Carolina State University, Raleigh, NC )
  • Lu, Z. ( North Carolina State University, Raleigh, NC )
  • Lee, D.R. ( North Carolina State University, Raleigh, NC )
掲載資料名:
AIchE 1994 Annual Meeting : November 13-18 San Francisco Hilton and Towers Hotel, San Francisco, California
シリーズ名:
AIChE meeting [papers]
シリーズ巻号:
1994
発行年:
1994
ペーパー番号:
1a
総ページ数:
7
出版情報:
New York: American Institute of Chemical Engineers
言語:
英語
請求記号:
A08000/950031
資料種別:
国際会議録

類似資料:

1 国際会議録 DEPOSITION OF HEAVILY-DOPED μc-SILICON THIN FILMS BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION PROCESS (remote PECVD)

Wang, C:, Bjorkman, C.H., Lee, D.R., Williams, M.J., Lucovsky, G.

Materials Research Society
7 国際会議録 DEPOSITION OF AMORPHOUS AND MICROCRYSTALLINE Si,C ALLOY THIN FILMS BY A REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION PROCESS

Wang, C., Lucovsky, G., Nemanich, R.J.

Materials Research Society
2 国際会議録 *THE ELECTRICAL PROPERTIES OF SILICON OXIDE DEPOSITED BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (RPECVD)

Kim, Sang S., Tsu, D. V., Lucovsky, G.

Materials Research Society
8 国際会議録 Bonded-H in Gate Dielectrics Deposited by Plasma Assisted Chemical Vapor Deposition and Subjected to Rapid Thermal Annealing

Lucovsky, G., Nimi, H., Koh, K.

MRS - Materials Research Society
3 国際会議録 THE ELECTRICAL PROPERTIES OF SILICON OXIDE DEPOSITED BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (RPECVD)

Kim, Sang S., Tsu, D. V., Lucovsky, G.

Materials Research Society
9 国際会議録 BONDED HYDROGEN IN SILICON OXIDE THIN FILMS DEPOSITED BY REMOT PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION

Tsu, D. V., Lucovsky, G.

Materials Research Society
4 国際会議録 DEPOSITION AND CHARACTERIZATION OF NEAR ‘INTRINSIC” μc-Si FILMS DEPOSITED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION -RPECVD

Williams, M.J., Wang, C., Lucovsky, G.

Materials Research Society
10 国際会議録 Integrated Processing of Silicon Oxynitride Alloy Dielectrics by Plasma-Assisted Oxidation, Chemical Vapor Deposition, and On-Line Rapid Thermal Annealing

Hattangady, S. V., Niimi, H., Gandhi, S., Lucovsky, G.

MRS - Materials Research Society
5 国際会議録 MICROSTRUCTURE OF Si FILMS DEPOSITED ON Si(100) SURFACES BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION, RPECVD: DEPENDENCE ON PROCESS PRESSURE AND …

Habermehl, S., He, S. S., Chen, Y. L., Lucovsky, G.

MRS - Materials Research Society
11 国際会議録 SURFACE CLEANING PRIOR TO FORMATION OF Si/SiO2 INTERFACES BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (RPECVD)

Lamb, H.H., Kalem, S., Bedge, S., Yasuda, T., Ma, Y., Lucovsky, G.

Materials Research Society
6 国際会議録 DEPOSITION OF DIELECTRIC FILMS BY REMOTE PLASMA ENHANCED CVD

Lucovsky G., Tsu, D.V., Markunas R.J.

Materials Research Society
12 国際会議録 QUASI-STOICHIOMETRIC SILICON NITRIDE THIN FILMS DEPOSITED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION

Lucovsky, G., Ma, Y., He, S.S., Yasuda, T., Stephens, D.J., Habermehl, S.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12