Non-equilibrium electron dynamics phenomena in scaled sub-100 nanometer gate length GaAs metal semiconductor field effect transistors

Non-equilibrium electron dynamics phenomena in scaled sub-100 nanometer gate length GaAs metal semiconductor field effect transistors

著者名:

Han, J. ( Kangnam Univ. (South Korea) )
Yoo, S. ( Yukyung Telecom Co,. Ltd. (South Korea) )

掲載資料名:

Fundamental problems of optoelectronics and microelectronics II : 13-16 September, 2004, Khabarovsk, Russia

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

5851

発行年:

2005

開始ページ:

357

終了ページ:

363

総ページ数:

7

出版情報:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819458483 [0819458481]

言語:

英語

請求記号:

P63600/5851

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015085
シリーズID:	PA00000029
会議名:	Fundamental problems of optoelectronics and microelectronics
回次:	2004 : 2nd
会議開催地:	Khabarovsk, Russia
会議開催年:	2004.09.13-2004.09.16

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