Flicker noise characteristics of MOSFETs with HfO2, HfAlOx, and Al2O3/HfO2 gate dielectrics

Flicker noise characteristics of MOSFETs with HfO2, HfAlOx, and Al2O3/HfO2 gate dielectrics

著者名:

Devireddy, S. P. ( Univ. of Texas at Arlington (USA) )

Min, B. ( Univ. of Texas at Arlington (USA) )

Celik-Butler, Z. ( Univ. of Texas at Arlington (USA) )

Wang, F. ( Freescale Semiconductor Inc. (USA) )

Zlotnicka, A. ( Freescale Semiconductor Inc. (USA) )

Tseng, H. -H. ( Freescale Semiconductor Inc. (USA) )

Tobin, P. J. ( Freescale Semiconductor Inc. (USA) )

さらに 2 件

掲載資料名:

Noise in devices and circuits III : 24-26 May, 2005, Austin, Texas, USA

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

5844

発行年:

2005

開始ページ:

208

終了ページ:

217

総ページ数:

10

出版情報:

Bellingham, Washington: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819458391 [0819458392]

言語:

英語

請求記号:

P63600/5844

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015078
シリーズID:	PA00000029
会議名:	International Symposium on Fluctuations and Noise : Noise in Devices and Circuits
回次:	2005 : 3rd
会議開催地:	Austin, TX, USA
会議開催年:	2005.05.24-2005.05.26

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