Noise behavior of a PNP- and NPN-type SiGe HBT: a simulation study

Noise behavior of a PNP- and NPN-type SiGe HBT: a simulation study

著者名:

Neinhus, B. ( Technical Univ. of Braunschweig (Germany) )
Jungemann, C. ( Technical Univ. of Braunschweig (Germany) )
Meinerzhagen, B. ( Technical Univ. of Braunschweig (Germany) )

掲載資料名:

Noise in devices and circuits III : 24-26 May, 2005, Austin, Texas, USA

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

5844

発行年:

2005

開始ページ:

150

終了ページ:

157

総ページ数:

8

出版情報:

Bellingham, Washington: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819458391 [0819458392]

言語:

英語

請求記号:

P63600/5844

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015078
シリーズID:	PA00000029
会議名:	International Symposium on Fluctuations and Noise : Noise in Devices and Circuits
回次:	2005 : 3rd
会議開催地:	Austin, TX, USA
会議開催年:	2005.05.24-2005.05.26

類似資料:

1 国際会議録 Accuracy assessment of compact RF noise models for SiGe HBTS by hydrodynamic device simulation (Invited Paper) Jungemann, C., Neinhus, B., Meinerzhagen, B., Dutton, R. W. SPIE - The International Society of Optical Engineering	7 国際会議録 Microscopic modeling of impact-ionization noise in SiGe heterojunction bipolar transistors M. Ramonas, C. Jungemann, P. Sakalas, M. Schroeter, W. Kraus SPIE - The International Society of Optical Engineering
2 国際会議録 Investigating the differences in low-frequency noise behavior of npn and pnp SiGe HBTs fabricated in a complementary SiGe HBT BiCMOS on SOI technology Zhao, E., Krithivasan, R., Sutton, A. K., Jin, Z., Cressler, J. D., El-Kareh, B., Balster, S., Yasuda, H. SPIE - The International Society of Optical Engineering	8 国際会議録 Measurements and Simulations of Lateral PNP Transistors in a SiC NPN BJT Technology for High Temperature Integrated Circuits L. Lanni, R. Ghandi, M. Domej, C.M. Zetterling, G. Malm Trans Tech Publications
3 国際会議録 Mobilty Modeling of Strained Germanium (s-Ge) Quantum Well (QW) Heterostructure pMOSFETs T. Krishnamohan, A. Pham, C. Jungemann, B. Meinerzhagen, K. Saraswat Electrochemical Society	9 国際会議録 Physics and Modelling Carrier Transport in the Base of npn SiGe HBTs Sokolic, S., Amon, S. Electrochemical Society
4 国際会議録 (2.5) 2:45 - 3:05 PM - Enhanced 5V Complementary SiGe BiCMOS Technology by Separate NPN/PNP Emitter Formatio El-Kareh, B., Balster, S., Steinmann, P., Yasuda, H., Nehrer, W., Cressler, J., Zhao, E., Hou, F., Dimecker, C., Garbe, … Electrochemical Society	10 国際会議録 Anomalous low-frequency noise behavior in 210 GHz SiGe HBTs Jin, Z., Johansen, J. A., Cressler, J. D., Joseph, A. J. SPIE - The International Society of Optical Engineering
5 国際会議録 Numerical modeling of electron noise in nanoscale Si devices C. Jungemann SPIE - The International Society of Optical Engineering	11 国際会議録 Modelling of Self - Heating Effects in SiGe-HBTS Senapati, B., Maiti, C.K. SPIE-The International Society for Optical Engineering
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