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Investigating the differences in low-frequency noise behavior of npn and pnp SiGe HBTs fabricated in a complementary SiGe HBT BiCMOS on SOI technology

著者名:
Zhao, E. ( Georgia Institute of Technology (USA) )
Krithivasan, R. ( Georgia Institute of Technology (USA) )
Sutton, A. K. ( Georgia Institute of Technology (USA) )
Jin, Z. ( Georgia Institute of Technology (USA) )
Cressler, J. D. ( Georgia Institute of Technology (USA) )
El-Kareh, B. ( Texas Instruments (Germany) )
Balster, S. ( Texas Instruments (Germany) )
Yasuda, H. ( Texas Instruments (Germany) )
さらに 3 件
掲載資料名:
Noise in devices and circuits III : 24-26 May, 2005, Austin, Texas, USA
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
5844
発行年:
2005
開始ページ:
132
終了ページ:
142
総ページ数:
11
出版情報:
Bellingham, Washington: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819458391 [0819458392]
言語:
英語
請求記号:
P63600/5844
資料種別:
国際会議録

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