Investigating the differences in low-frequency noise behavior of npn and pnp SiGe HBTs fabricated in a complementary SiGe HBT BiCMOS on SOI technology
- 著者名:
Zhao, E. ( Georgia Institute of Technology (USA) ) Krithivasan, R. ( Georgia Institute of Technology (USA) ) Sutton, A. K. ( Georgia Institute of Technology (USA) ) Jin, Z. ( Georgia Institute of Technology (USA) ) Cressler, J. D. ( Georgia Institute of Technology (USA) ) El-Kareh, B. ( Texas Instruments (Germany) ) Balster, S. ( Texas Instruments (Germany) ) Yasuda, H. ( Texas Instruments (Germany) ) - 掲載資料名:
- Noise in devices and circuits III : 24-26 May, 2005, Austin, Texas, USA
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 5844
- 発行年:
- 2005
- 開始ページ:
- 132
- 終了ページ:
- 142
- 総ページ数:
- 11
- 出版情報:
- Bellingham, Washington: SPIE - The International Society of Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819458391 [0819458392]
- 言語:
- 英語
- 請求記号:
- P63600/5844
- 資料種別:
- 国際会議録
類似資料:
Electrochemical Society |
SPIE - The International Society for Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
Electrochemical Society |
10
国際会議録
Comparison of 1/f noise in complementary NPN and PNP polysilicon emitter bipolar transistors
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
Electrochemical Society |
SPIE - The International Society of Optical Engineering |
Electrochemical Society |