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First microprocessors with immersion lithography

著者名:
Lee, D.-Y. ( Samsung Electronics (South Korea) )
Kim, I.-S. ( Samsung Electronics (South Korea) )
Jung, S.-G. ( Samsung Electronics (South Korea) )
Jung, M.-H. ( Samsung Electronics (South Korea) )
Park, J.-O. ( Samsung Electronics (South Korea) )
Oh, S.-H. ( Samsung Electronics (South Korea) )
Woo, S.-G. ( Samsung Electronics (South Korea) )
Cho, H.-K. ( Samsung Electronics (South Korea) )
Moon, J.-T. ( Samsung Electronics (South Korea) )
さらに 4 件
掲載資料名:
Optical microlithography XVIII : 1-4 March, 2005, San Jose, California, USA
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
5754
発行年:
2005
パート:
1
開始ページ:
119
終了ページ:
128
総ページ数:
10
出版情報:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819457349 [0819457345]
言語:
英語
請求記号:
P63600/5754
資料種別:
国際会議録

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1 国際会議録 Simulation of mask induced polarization effect on imaging in immersion lithography [6154-105]

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7 国際会議録 Attainable road to the lower-k1 extension using high-transmittance attenuated phase-shifting mask in the KrF lithography world

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2 国際会議録 Synthesis of fluorinated materials for 193-nm immersion lithography and 157-nm lithography

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8 国際会議録 Resolution enhanced top anti-reflective coating materials for ArF immersion lithography [6153-74]

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3 国際会議録 Modified polymer architecture for immersion lithography

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9 国際会議録 Defect inspection of EUVmask blank using confocal microscopy: simulation and experiment [6151-49]

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4 国際会議録 Patterning with spacer for expanding the resolution limit of current lithography tool [6156-27]

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5 国際会議録 Simulation and experiments for inspection properties of EUV mask defects [6283-85]

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11 国際会議録 Macro analysis of line edge and line width roughness [6152-33]

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6 国際会議録 Polymer structure modifications for immersion leaching and watermark control [6153-77]

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12 国際会議録 Polymer structure modifications for immersion leaching control

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