Comparison of deep levels in GaN grown by MBE. MOCVD. and HVPE
- 著者名:
Johnstone, D. ( Virginia Commonwealth Univ. (USA) ) Biyikli, S. ( Virginia Commonwealth Univ. (USA) ) Dogan, S. ( Virginia Commonwealth Univ. (USA) and Ataturk Univ. (Turkey) ) Moon, Y.T. ( Virginia Commonwealth Univ. (USA) ) Yun, F. ( Virginia Commonwealth Univ. (USA) ) Morkoc, H. ( Virginia Commonwealth Univ. (USA) ) - 掲載資料名:
- Light-Emitting Diodes: Research, Manufacturing, and Applications IX
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 5739
- 発行年:
- 2005
- 開始ページ:
- 7
- 終了ページ:
- 15
- 総ページ数:
- 9
- 出版情報:
- Bellingham, Wash.: SPIE - The International Society of Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819457134 [0819457132]
- 言語:
- 英語
- 請求記号:
- P63600/5739
- 資料種別:
- 国際会議録
類似資料:
Electrochemical Society |
Materials Research Society |
Trans Tech Publications |
Trans Tech Publications |
Materials Research Society |
SPIE - The International Society of Optical Engineering |
Trans Tech Publications |
SPIE - The International Society of Optical Engineering |
Materials Research Society |
11
国際会議録
Preliminary Characterization of GaN MBE Epitaxial Layers Grown on Nanoporous 6H-SiC Substrates
Materials Research Society |
SPIE - The International Society for Optical Engineering |
Materials Research Society |