980-nm small-aperture tapered laser (1 W CW, M2-3) and tapered arrays (>3W CW): comparison between GalnAs/(Al)GaAs quantum dot and quantum well structures
- 著者名:
Michei, N. ( Thales Research and Technology (France) and Alcatel-Thales lll-V Lab. (France) ) Calligaro, M. ( Thales Research and Technology (France) and Alcatel-Thales lll-V Lab. (France) ) Krakowski, M. ( Thales Research and Technology (France) and Alcatel-Thales lll-V Lab. (France) ) Deubert, S. ( Univ. Wurzburg (Germany) ) Reithmaier, J.-P. ( Univ. Wurzburg (Germany) ) Forchel, A. ( Univ. Wurzburg (Germany) ) - 掲載資料名:
- Novel In-Plane Semiconductor Lasers IV
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 5738
- 発行年:
- 2005
- 開始ページ:
- 355
- 終了ページ:
- 364
- 総ページ数:
- 10
- 出版情報:
- Bellingham, Wash.: SPIE - The International Society of Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819457127 [0819457124]
- 言語:
- 英語
- 請求記号:
- P63600/5738
- 資料種別:
- 国際会議録
類似資料:
SPIE - The International Society of Optical Engineering |
Society of Photo-optical Instrumentation Engineers |
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
12
国際会議録
High-brightness tapered laser diode bars and optical modules with Al-free active region (λ=980 nm)
SPIE - The International Society of Optical Engineering |