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GaSb-based I .9- to 2.4-μm quantum well diode lasers with low-beam divergence

著者名:
Rattunde, M. ( Fraunhofer-Institut far Angewandte Festkorperphysik (Germany) )
Geerlings, E. ( Fraunhofer-Institut far Angewandte Festkorperphysik (Germany) )
Schmitz, J. ( Fraunhofer-Institut far Angewandte Festkorperphysik (Germany) )
Kaufel, G. ( Fraunhofer-Institut far Angewandte Festkorperphysik (Germany) )
Weber, J. ( m2kLaser GmbH (Germany) )
Mikulla, M. ( m2kLaser GmbH (Germany) )
Wagner, J. ( Fraunhofer-Institut fur Angewandte Festkorperphysik (Germany) )
さらに 2 件
掲載資料名:
Novel In-Plane Semiconductor Lasers IV
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
5738
発行年:
2005
開始ページ:
138
終了ページ:
145
総ページ数:
8
出版情報:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819457127 [0819457124]
言語:
英語
請求記号:
P63600/5738
資料種別:
国際会議録

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