Blank Cover Image

The role of acceptor anneal temperature on the performance of InGaN/GaN quantum well light emitting diodes

著者名:
Thomson, J.D. ( Cardiff Univ. (United Kingdom) )
Pope, I.A. ( Cardiff Univ. (United Kingdom) )
Smowton, P.M. ( Cardiff Univ. (United Kingdom) )
Blood, P. ( Cardiff Univ. (United Kingdom) )
Lynch, R.J. ( Univ. of Sheffield (United Kingdom) )
Hill, G. ( Univ. of Sheffield (United Kingdom) )
Wang, T. ( Univ. of Sheffield (United Kingdom) )
Parbrook, P.J. ( Univ. of Sheffield (United Kingdom) )
さらに 3 件
掲載資料名:
Physics and Simulation of Optoelectronic Devices XIII
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
5722
発行年:
2005
開始ページ:
425
終了ページ:
430
総ページ数:
6
出版情報:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819456960 [0819456969]
言語:
英語
請求記号:
P63600/5722
資料種別:
国際会議録

類似資料:

1 国際会議録 Time evolution of piezoelectic field screening in InGaN quantum wells

Thomson, J.D., Brown, I.H., Smowton, P.M., Blood, P., Chow, W.W., Fox, A.M., Izquierdo, S.M.Olaizola

SPIE - The International Society of Optical Engineering
7 国際会議録 Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

Cao, X. A., LeBoeuf, S. F., Garrett, J. L., Ebong, A., Rowland, L. B., Arthur, S. D.

Materials Research Society
2 国際会議録 Influence of Defects on Current Transport in GaN/InGaN Multiple Quantum Well Light-Emitting Diodes

Cao, X.A., Stokes, E.B., LeBoeuf, S.F., Sandvik, P.M., Kretchmer, J., Walker, D.

Materials Research Society
8 国際会議録 The effect of junction temperature on the optoelectrical properties of green InGaN/GaN multiple quantum well light-emitting diodes

W. Chen, D. Kuo, C. Hung, C. Ke, H. Shen, J. Wang, Y. Wu, T. Nee

SPIE - The International Society of Optical Engineering
3 国際会議録 Temperature dependence of light-output performance of InGaN/GaN multiple-quantum-well light-emitting diodes with various In compositions

Huh, C., Schaff, W/J., Eastman, Lester F., Park, S.-J.

SPIE - The International Society of Optical Engineering
9 国際会議録 Current transport and emission mechanisms in high-brightness green InGaN/AlGaN/GaN single quantum well light-emitting diodes

Osinski,M., Perlin,P., Eliseev,P.G., Furioli,J.

SPIE-The International Society for Optical Engineering
4 国際会議録 Gain characteristics of GaInP quantum well laser structures (Invited Paper)

Lewis, G.M., Thomson, P.D., Smowton, P.M., Hulyer, P.J., Blood, P.

SPIE-The International Society for Optical Engineering
10 国際会議録 Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes

Shen, Y.C., Wierer, J.J., Krames, M.R., Ludowise, M.J., Misra, M.S., Ahmed, F., Kim, A.Y., Mueller, G.O., Bhat, J.C., …

SPIE - The International Society of Optical Engineering
5 国際会議録 Growth and Characterization of Semipolar InGaN/GaN Multiple Quantum Wells and Light-Emitting Diodes on (1011) GaN Templates

Chakraborty, Arpan, Onuma, T., Baker, T. J., Keller, S., Chichibu, S. F., DenBaars, S. P., Nakamura, S., Speck, J. S., …

Materials Research Society
11 国際会議録 Properties of InGaN/AlInGaN/AlGaN quantum-well UV light-emitting diodes

Lee, J., Eliseev, P.G., Osinski, M., Lee, D.-S., Florescu, D.I., Guo, S., Pophristic, M.

SPIE-The International Society for Optical Engineering
6 国際会議録 Growth and Characterization of Semipolar InGaN/GaN Multiple Quantum Wells and Light-Emitting Diodes on (10-1-1) GaN Templates

Chakraborty, Arpan, Onuma, T., Baker, T. J., Keller, S., Chichibu, S. F., DenBaars, S. P., Nakamura, S., Speck, J. S., …

Materials Research Society
12 国際会議録 Electroluminescence Properties of InGaN/AlGaN/GaN Light Emitting Diodes With Quantum Wells

Yunovich, A. E., Kudryashov, V. E., Turkin, A. N., Kovalev, A. N., Manyakhin, F. I.

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12