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Low-leakage In0.53Ga0.47As p-i-n photodetector fabricated on GaAs substrate with linearly graded metamorphic InxGa1-xP buffer

著者名:
  • Lin, C.-K. ( National Chiao Tung Univ. (Taiwan, China) )
  • Kuo, H.-C. ( National Chiao Tung Univ. (Taiwan, China) )
  • Liao, Y.-S. ( National Chiao Tung Univ. (Taiwan, China) )
  • Lin, G.-R. ( National Chiao Tung Univ. (Taiwan, China) )
掲載資料名:
Semiconductor and Organic Optoelectronic Materials and Devices
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
5624
発行年:
2000
開始ページ:
399
終了ページ:
406
総ページ数:
8
出版情報:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819455789 [0819455784]
言語:
英語
請求記号:
P63600/5624
資料種別:
国際会議録

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