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High-power Al-free active region InGaAsP/GaAs(λ=852 nm) laser diodes for atomic clocks and interferometry applications

著者名:
Vermersch, F. -J. ( Alcatel-Thales III-V Lab. (France) and Thales Research and Technology (France) )
Lecomte, M. ( Alcatel-Thales III-V Lab. (France) and Thales Research and Technology (France) )
Calligaro, M. ( Alcatel-Thales III-V Lab. (France) and Thales Research and Technology (France) )
Parillaud, O. ( Alcatel-Thales III-V Lab. (France) and Thales Research and Technology (France) )
Bansropun, S. ( Thales Research and Technology (France) )
Garcia, M. ( Alcatel-Thales III-V Lab. (France) and Thales Research and Technology (France) )
Krakowski, M. ( Alcatel-Thales III-V Lab. (France) and Thales Research and Technology (France) )
さらに 2 件
掲載資料名:
Solid state laser technologies and femtosecond phenomena : 25-27 October, 2004, London, United Kingdom
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
5620
発行年:
2004
開始ページ:
170
終了ページ:
178
総ページ数:
9
出版情報:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819455734 [0819455733]
言語:
英語
請求記号:
P63600/5620
資料種別:
国際会議録

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