1/f noise and ballistic mobility in GaN/AlGaN heterostructure field effect transistors in high magnetic fields
- 著者名:
Rumyantsev, S. L. ( Rensselaer Polytechnic Institute (USA) ) Shur, M. S. ( Rensselaer Polytechnic Institute (USA) ) Knap, W. ( CNRS-Univ. Montpellier II (France) ) Dyakonova, N. ( CNRS-Univ. Montpellier II (France) ) Pascal, F. ( Ctr. d'Electronique et de Micro-optoelectronique de Montpellier (France) ) Hoffman, A. ( Ctr. d'Electronique et de Micro-optoelectronique de Montpellier (France) ) Ghuel, Y. ( Institut d'Electronique de Microelectronique et de Nanotechnologie (France) ) Gaquiere, C. ( Institut d'Electronique de Microelectronique et de Nanotechnologie (France) ) Theron, D. ( Institut d'Electronique de Microelectronique et de Nanotechnologie (France) ) - 掲載資料名:
- Noise in devices and circuits II : 26-28 May 2004, Maspalomas, Gran Canaria, Spain
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 5470
- 発行年:
- 2004
- 開始ページ:
- 277
- 終了ページ:
- 285
- 総ページ数:
- 9
- 出版情報:
- Bellingham, Wash.: SPIE - The International Society of Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819453969 [081945396X]
- 言語:
- 英語
- 請求記号:
- P63600/5470
- 資料種別:
- 国際会議録
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