Line-width verification for 0.18- and 0.25-μm design rule wafers and reticles

Line-width verification for 0.18- and 0.25-μm design rule wafers and reticles

著者名:

Kuo, S. -C. ( Taiwan Mask Corp. )
Wu, C. ( Applied Materials (USA) )
Schumann, N. ( Applied Materials (USA) )
Staud, W. ( Applied Materials (USA) )

掲載資料名:

Photomask and X-Ray Mask Technology VI

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3748

発行年:

1999

開始ページ:

557

終了ページ:

562

総ページ数:

6

出版情報:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819432308 [081943230X]

言語:

英語

請求記号:

P63600/3748

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014623
シリーズID:	PA00000029
会議名:	Photomask and Next Generation Lithography Mask Technology : Photomask and X-Ray Mask Technology
回次:	1999 : 6th
会議開催地:	Yokohama, Japan
会議開催年:	1999.04.13-1999.04.14

類似資料:

1 国際会議録 Line-width uniformity verification for 0.18-ｦﾌm and below design rule reticles Tan,T., Kuo,S.C., Shen,W.P., Schumann,N., Wu,C. SPIE - The International Society for Optical Engineering	7 国際会議録 Evaluation of the Electromigration Performance of New Aluminum Via Plug-Fill Techniques for 0.25ｦﾌm and 0.18ｦﾌm Technologies Foley, S., Tung, N. Chan, Gounelle, C., Wyborn, G., Louwers, S., Mathewson, A. MRS - Materials Research Society
2 国際会議録 In-line verification of linewidth uniformity for 0.18 and below:design rule reticles Tan,T., Kuo,S.C., Wu,C., Falah,R., Hemar,S., Sade,A., Gottlib,G. SPIE - The International Society for Optical Engineering	8 国際会議録 Plasma etch of AZ5206/Cr and ZEP7000/Cr for 0.18- to 0.25-ｦﾌm-generation advanced mask fabrication Tsai,W., Chen,F., Kamna,M., Chegwidden,S., Labovitz,S.M., Farnsworth,J.N., Dao,G.T. SPIE-The International Society for Optical Engineering
3 国際会議録 Advanced Silicon Wafers for 0.18 μm Design Rule and Beyond: Epi and fFLASH!* Schmolke, R., Blietz, M., Schauer, R., Zemke, D., Oelkrug, H., Ammon, W.v., Lambert, U., Grtlf, D. Electrochemical Society	9 国際会議録 Double-exposure strategy using OPC and simulation and the performance on wafer with sub-0.10-μm design rule in ArF lithography Oh, S.-Y., Kim, W.-H., Yune, H.-S., Kim, H.-B., Kim, S.-M., Ahn, C.-N., Shin, K.-S. SPIE-The International Society for Optical Engineering
4 国際会議録 Advanced Silicon Wafers for 0.18 μm Design Rule and Beyond: Epi and fFLASH! Schmolke,R., Blietz,M., Schauer,R., Zemke,D., Oelkrug,H., Ammon,W.v., Lambert,U., Graf,D. Electrochemical Society, SPIE-The International Society for Optical Engineering	10 国際会議録 Defect printability for sub-0.18ｦﾌm design rules using 193-nm lithography process and binary OPC reticle Phan,K.A., Spence,C.A., Schefske,J.A., Okoroanyanwu,U., Levinson,H.J. SPIE - The International Society for Optical Engineering
5 国際会議録 Lithographic evaluation of deep-UV photoresists for 0.25-and 0.18-ｦﾌm technology design rules Amblard,G.R. SPIE-The International Society for Optical Engineering	11 国際会議録 Size matters:defect detectability in reticle and wafer inspection including advanced aerial image simulation for defect printability Almog,E., Caldwell,R.F., Chang,F.-C., Chen,J.F., Farrar,N.R., Karklin,L., Laidig,T.L., Sabouri,S., Shen,W.P., Staud,W., … SPIE - The International Society for Optical Engineering
6 国際会議録 Manufacturability of a 0.18-μm OPC technology Hsieh, R. G., Lin, H. T., Lin, J. C. H., Yen, A., Yoo, C. S., Wang, J. J. SPIE - The International Society of Optical Engineering	12 国際会議録 Integration Challenges of Inorganic Low-K (K < 2.5) Materials With Cu for Sub-0.25)μm Multilevel Interconnects Blumenthal, R., Braekelmann, G., Cave, N. G., Conner, J., Crabtree, P., Defilippi, J., Denning, D., Farkas, J., … Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12