Strain Relaxation of Strained-Si Layers on SiGe-on-Insulator (SGOI) Structures After Mesa Isolation
- 著者名:
Usuda, Koji Mizuno, Tomohisa Tezuka, Tsutomu Sugiyama, Naoharu Moriyama, Yoshihiko Nakaharai, Shu Takagi, Shin-ichi - 掲載資料名:
- Spatially resolved characterization of local phenomena in materials and nanostructures : symposium held December 2-5, 2002, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 738
- 発行年:
- 2003
- 開始ページ:
- 317
- 終了ページ:
- 644
- 総ページ数:
- 334
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558996755 [1558996753]
- 言語:
- 英語
- 請求記号:
- M23500/738
- 資料種別:
- 国際会議録
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(11.2) 3:40 - 4:00 PM - Formation Mechanism of Ge-on-lnsulator Layers by Ge-condensation Technique
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