Dislocation Reduction With Quantum Dots In Gan Grown On Sapphire Substrates By Molecular Beam Epitaxy

Dislocation Reduction With Quantum Dots In Gan Grown On Sapphire Substrates By Molecular Beam Epitaxy

著者名:

Smith, David J.

Huang, Daming

Reshchikov, Michael A.

掲載資料名:

Materials and devices for optoelectronics and microphotonics : symposium held April 1-5, 2002, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

722

発行年:

2002

開始ページ:

33

終了ページ:

38

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996588 [1558996583]

言語:

英語

請求記号:

M23500/722

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014595
シリーズID:	PA00000011
会議名:	Symposium on materials and devices for optoelectronics and microphotonics
回次:	2002
会議開催地:	San Francisco, CA, USA
会議開催年:	2002.04.01-2002.04.05

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