Deep Level Study In Epitaxial 4H-SiC Grown On Substrates Inclined Toward <1Bar100>

Deep Level Study In Epitaxial 4H-SiC Grown On Substrates Inclined Toward <1Bar100>

著者名:

掲載資料名:

Defect and impurity engineered semiconductors and devices III : symposium held April 1-5, 2002, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

719

発行年:

2002

開始ページ:

457

終了ページ:

462

総ページ数:

6

出版情報:

Warrendale, Pa: Materials Research Society

ISSN:

02729172

ISBN:

9781558996656 [1558996659]

言語:

英語

請求記号:

M23500/719

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014592
シリーズID:	PA00000011
会議名:	Symposium on defect and impurity engineered semiconductors and devices
回次:	3rd
会議開催地:	San Francisco, CA, USA
会議開催年:	2002.04.01-2002.04.05

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