Modeling Growth Directional Features of Silicon Nanowires Obtained Using SiO
- 著者名:
- 掲載資料名:
- Defect and impurity engineered semiconductors and devices III : symposium held April 1-5, 2002, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 719
- 発行年:
- 2002
- 開始ページ:
- 235
- 終了ページ:
- 242
- 総ページ数:
- 8
- 出版情報:
- Warrendale, Pa: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558996656 [1558996659]
- 言語:
- 英語
- 請求記号:
- M23500/719
- 資料種別:
- 国際会議録
類似資料:
MRS - Materials Research Society |
Materials Research Society |
Electrochemical Society |
8
国際会議録
Phosphorus and Aluminum Gettering of Gold in Silicon: Simulation and Optimization Considerations
MRS - Materials Research Society |
Trans Tech Publications |
Electrochemical Society |
North Holland |
10
国際会議録
EXIGENT-ACCOMODATION-VOLUME OF PRECIPITATION AND FORMATION OFOXYGEN PRESIPITATES IN SILICON
Materials Research Society |
North-Holland |
11
国際会議録
136a. Computational Understanding of Growth Mechanism and Novel Properties of Silicon Nanowires
American Institute of Chemical Engineers |
Materials Research Society |
Trans Tech Publications |