Annealing Behavior Of Locally Confined Dislocation Loops Under Inert And Oxidizing Ambient

Annealing Behavior Of Locally Confined Dislocation Loops Under Inert And Oxidizing Ambient

著者名:

Tsamis, C.

掲載資料名:

Silicon front-end junction formation technologies : symposium held April 2-4, 2002, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

717

発行年:

2002

開始ページ:

243

終了ページ:

248

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996533 [1558996532]

言語:

英語

請求記号:

M23500/717

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014590
シリーズID:	PA00000011
会議名:	Symposium on silicon front-end junction formation technologies
回次:	2002
会議開催地:	San Francisco, CA, USA
会議開催年:	2002.04.02-2002.04.04

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