Effect Of Technology Scaling On Mos Transistors With High-K Gate Dielectrics
- 著者名:
- 掲載資料名:
- Silicon materials - processing characterization and reliability : symposium held April 1-5, 2002, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 716
- 発行年:
- 2002
- 開始ページ:
- 133
- 終了ページ:
- 138
- 総ページ数:
- 6
- 出版情報:
- Warrendale: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558996526 [1558996524]
- 言語:
- 英語
- 請求記号:
- M23500/716
- 資料種別:
- 国際会議録
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Performance Trade-offs by the use of High-K Gate Dielectrics in Sub 100 nm Channel Length MOSFETs
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