Low Temperature Oxynitridation Of SiGe In NO/N2O Ambients

Low Temperature Oxynitridation Of SiGe In NO/N2O Ambients

著者名:

掲載資料名:

Amorphous and heterogeneous silicon-based films - 2002 : symposium held April 2-5, 2002, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

715

発行年:

2002

開始ページ:

503

終了ページ:

508

総ページ数:

6

出版情報:

Warrendale: Materials Research Society

ISSN:

02729172

ISBN:

9781558996519 [1558996516]

言語:

英語

請求記号:

M23500/715

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014588
シリーズID:	PA00000011
会議名:	Symposium on amorphous and heterogeneous silicon-based films
回次:	2002
会議開催地:	San Francisco, CA, USA
会議開催年:	2002.04.02-2002.04.05

類似資料:

1 国際会議録 Low Temperature Si0.85Ge0.15 Oxynitridation in Wet-Nitric Oxide Ambient Dasgupta, Anindya, Takoudis, Christos G. Materials Research Society	7 国際会議録 612a. Density Functional Theory Study of Low-Temperature Si Epitaxial Growth Javier Rosado, Deepthi Gopireddy, Christos G. Takoudis American Institute of Chemical Engineers
2 国際会議録 Process-Structure Relationships of Nitrided Oxides and Oxynitrides Dasgupta, Anindya, Takoudis, Christos G. Materials Research Society	8 国際会議録 204d. Atomic Layer Deposited Y2O3 Thin Films Using Novel Cyclopentadienyl-Type Yttrium Precursor Christos G. Takoudis American Institute of Chemical Engineers
3 国際会議録 On the Argon Annealing-Based Improvements of the Properties of Ultra-Thin Oxynitrides Nitrides With NH3 Dasgupta, Anindya, Takoudis, Christos G., Martel, Greg Materials Research Society	9 国際会議録 Effect of Process Conditions on Gas-Phase Decomposition of Nitrous Oxide in Furnace Oxynitridation of Silicon Singhvi, Shri, Dang, Sanjit Singh, Rupangudi, Ramana V., Takoudis, Christos G. American Institute of Chemical Engineers
4 国際会議録 Metalorganic Chemical Vapor Deposition of Aluminum Oxide on Silicon Nitride Dasgupta, Anindya, Chowdhuri, Abhijit Roy, Takoudis, Christos G. Materials Research Society	10 国際会議録 Mocvd Heterostructures of Tio2 and Al2o3 Using Cycling of Tdeat, Tma and O2 Xuemei Song, Christos G. Takoudis American Institute of Chemical Engineers
5 国際会議録 Growth of Silicon Suboxide Layer Above An Atomically Abrupt SiO2/Si(100) Interface in Conventional Furnace Oxynitridation Using N2O Ambients Pennycook, Stephen J., Browning, Nigel D., Dang, SANJIT S., Duscher, GERD, Rupangudi, Ramana V., Takoudis, Christos G., … American Institute of Chemical Engineers	11 国際会議録 Characterization of Atomic Layer Deposited Ultrathin HfO2 Film as a Diffusion Barrier in Cu Metallization Prodyut Majumder, Rajesh Katamreddy, Christos G. Takoudis Materials Research Society
6 国際会議録 Furnace Silicon Oxynitridation in Nitrous Oxide Ambients Singhvi, S., Takoudis, C.G. Electrochemical Society	12 国際会議録 Variation in the Silicon Oxynitridation Process Along a Furnace Length Dang, S.S., Takoudis, C.G. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12