Electrical Characterization of GaN Metal Oxide Semiconductor Diode Using Sc2O3 as the Gate Oxide
- 著者名:
Mehandru, R. Gila, B.P. Kim, J. Johnson, J.W. Lee, K.P. Luo, B. Onstine, A.H. Abernathy, C.R. Pearton, S.J. Ren, F. - 掲載資料名:
- GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 693
- 発行年:
- 2002
- 開始ページ:
- 767
- 終了ページ:
- 772
- 総ページ数:
- 6
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558996298 [155899629X]
- 言語:
- 英語
- 請求記号:
- M23500/693
- 資料種別:
- 国際会議録
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