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Reverse-Annealing Phenomenon During the High-Temperature Implantation of Ar Ions into GaN

著者名:
掲載資料名:
GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
693
発行年:
2002
開始ページ:
641
終了ページ:
646
総ページ数:
6
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558996298 [155899629X]
言語:
英語
請求記号:
M23500/693
資料種別:
国際会議録

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