Blank Cover Image

Defects Created by 25 keV Hydrogen Implantation in n-Type GaN

著者名:
Auret, F.D.
Meyer, W.E.
Laarhoven, H.A. van
Goodman, S.A.
Legodi, M.J.
Beaumont, B.
Gibart, P.
さらに 2 件
掲載資料名:
GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
693
発行年:
2002
開始ページ:
271
終了ページ:
276
総ページ数:
6
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558996298 [155899629X]
言語:
英語
請求記号:
M23500/693
資料種別:
国際会議録

類似資料:

1 国際会議録 Electrical and optical characterisation of defects iuduced in epitaxially grown n-Si during 1 keV noble gas ion bombardment

Deenapanray,P.N.K., Auret,F.D., Myburg,G., Meyer,W.E., Goodman,S.A.

Trans Tech Publications
7 国際会議録 Electrical Characterization of Metastable Defects Introduced in GaN by Eu-Ion Implantation

F.D. Auret, W.E. Meyer, M. Diale, P.J. Janse Van Rensburg, S.F. Song

Trans Tech Publications
2 国際会議録 Electronic properties of defects introduced in n- and p-type Si1-xGex during ion etching

Goodman,S.A., Auret,F.D., Mamor,M., Deenapanray,P.N.K., Meyer,W.E.

Trans Tech Publications
8 国際会議録 Electrical characterization of defects introduced during plasma-based processing of GaAs

Auret,F.D., Goodman,S.A., Myburg,G., Meyer,W.E., Deenapanray,P.N.K., Murtagh,M., Ye,S.-R., Masterson,H.J., …

Trans Tech Publications
3 国際会議録 Electronic Properties and Introduction Kinetics of a Metastable Radiation Induced Defect in n-GaAs

Auret,F.D., Goodman,S.A., Meyer,W.E.

Trans Tech Publications
9 国際会議録 Defect Engineering and Atomic Relocation Processes in Impurity-Free Disordered GaAs and AlGaAs

Deenapanray, P.N.K., Krispin, M., Meyer, W.E., Tan, H.H., Jagadish, C., Auret, F.D.

Materials Research Society
4 国際会議録 Electrical characterization ofelectron beam induced defects in epitaxially grown Si1-xGex

Mamor,M., Auret,F.D., Goodman,S.A., Myburg,G., Deenapanray,P.N.K., Meyer,W.E.

Trans Tech Publications
10 国際会議録 Optical and Electrical Characterisation of He Plasma Sputtered n-GaAs

Murtagh,M., Hildebrandt,S., Herbert,P.A.F., O'Connor,G.M., Crean,G.M., Auret,F.D., Goodman,S.A., Myburg,G., Meyer,W.E.

Trans Tech Publications
5 国際会議録 Electrical Characterization of Sputter Deposition Induced Defects in n-GaN

Auret, F. D., Goodman, S. A., Koschnick, F. K., Spaeth, J-M., Beaumont, B., Gibart, P.

MRS - Materials Research Society
11 国際会議録 Defect Formation by Low Energy Ions during Sputter Deposition of TiW and Au on Epitaxially Grown n-Si at Different Plasma Pressures

Deenapanray,P.N.K., Auret,F.D., Myburg,G., Hayes,M., Meyer,W.E., Schutte,C.

Trans Tech Publications
6 国際会議録 Electrical Characterization of Defects Introduced in n-GaN During High Energy Proton and He-Ion Irradiation

Goodman, S. A., Auret, F. D., Koschnick, F. K., Spaeth, J-M., Beaumont, B., Gibart, P.

MRS - Materials Research Society
12 国際会議録 Electronic Properties of Defects Introduced during Electron and Alpha Irradiation of GaAs

Atsret,F.D., Goodman,S.A., Meyer,W.E., Erasmus,R.M., Myburg,G.

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12