Effect of High Temperature Single and Multiple AlN Intermediate Layers on N-Polar and Ga-Polar GaN Grown by Molecular Beam Epitaxy | 東京工業大学附属図書館文献データベース

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Effect of High Temperature Single and Multiple AlN Intermediate Layers on N-Polar and Ga-Polar GaN Grown by Molecular Beam Epitaxy

著者名:

Hauenstein, R.J.

さらに 7 件

掲載資料名:

GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

693

発行年:

2002

開始ページ:

177

終了ページ:

182

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996298 [155899629X]

言語:

英語

請求記号:

M23500/693

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014569
シリーズID:	PA00000011
会議名:	Symposium on gan and related alloys
回次:	2001
会議開催地:	Boston, MA, USA
会議開催年:	2001.11.26-2001.11.30

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