Doping Profiles of n-Type GaAs Layers Grown on Si by the Conformal Method
- 著者名:
Ardila, Angel M. Martinez, O. Avella, M. Jimenez, J. Gerard, B. Napierala, J. Gil-Lafon, E. - 掲載資料名:
- Progress in semiconductor materials for optoelectronic applications : symposium held November 26-29, 2001, Boston, Massachusetts, U.S.A
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 692
- 発行年:
- 2002
- 開始ページ:
- 417
- 終了ページ:
- 422
- 総ページ数:
- 6
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558996281 [1558996281]
- 言語:
- 英語
- 請求記号:
- M23500/692
- 資料種別:
- 国際会議録
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3
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A Study of Conformal GaAs on Si Layers by Micro-Raman and Spectral Imaging Cathodoluminescence
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