Strain Relaxation Mechanisms in He+-Implanted and Annealed Si1-xGex Layers on Si(001) Substrates

Strain Relaxation Mechanisms in He+-Implanted and Annealed Si1-xGex Layers on Si(001) Substrates

著者名:

掲載資料名:

Materials issues in novel si-based technology : symposium held November 26-28, 2001, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

686

発行年:

2002

開始ページ:

27

終了ページ:

32

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996229 [1558996222]

言語:

英語

請求記号:

M23500/686

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014562
シリーズID:	PA00000011
会議名:	Symposium on materials issues in novel si-based technology
回次:	2001
会議開催地:	Boston, MA, USA
会議開催年:	2001.11.26-2001.11.28

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