Thermal Stability of Strained Si on Relaxed Si1-xGex Buffer Layers

Thermal Stability of Strained Si on Relaxed Si1-xGex Buffer Layers

著者名:

Mooney, P.M.

掲載資料名:

Materials issues in novel si-based technology : symposium held November 26-28, 2001, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

686

発行年:

2002

開始ページ:

3

終了ページ:

8

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996229 [1558996222]

言語:

英語

請求記号:

M23500/686

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014562
シリーズID:	PA00000011
会議名:	Symposium on materials issues in novel si-based technology
回次:	2001
会議開催地:	Boston, MA, USA
会議開催年:	2001.11.26-2001.11.28

類似資料:

1 国際会議録 Dislocation-Related Photoluminescence in Strain-Relaxed Si1-xGex Buffer Layer Structures Shum, Kai, Mooney, P. M., Chu, J. O. MRS - Materials Research Society	7 国際会議録 Dislocation-related electronic states in strain-relaxed Si1-xGex/Si epitaxial layers grown at low temperature.(Invited) Mooney,P.M., Shum,Kai Trans Tech Publications
2 国際会議録 Silicon-On-Sapphire Technology: QUO VADIS II. A Competitive Alternative for RF Systems Lagnado, I., de Ia Houssaye, P.R., Koester, S.J., Hammond, R., Chu, J.O., Ott, J.A., Mooney, P.M., Perraud, L., Jenkins, … Electrochemical Society	8 国際会議録 THERMAL STABILITY OF THE STRUCTURAL AND ELECTRONIC PROPERTIES OF STRAIN SYMMETRIZED SimGen SUPERLATTICES AND UNGRADED, NEARLY RELAXED Si1-XGeX Dafesh, P.A., Adams, P.M., Arbet-Engels, V., Wang, K.L. Materials Research Society
3 国際会議録 Origin of Mosaic Structure in Relaxed Si1x-Gex Layers Mooney,P.M., LeGoues,F.K., Chu,J.O. Trans Tech Publications	9 国際会議録 Rapid Thermal Annealing of Ion Implanted Strained Si1-xGex Thomsen,E.V., Larsen,A.Nylandsted, Hansen,J.L., Kringhoj,P., Shiryaev,S.Y., Weyer,G. Trans Tech Publications
4 国際会議録 Strain Relaxation Mechanisms in He+-Implanted and Annealed Si1-xGex Layers on Si(001) Substrates Christiansen, S.H., Mooney, P.M., Chu, J.O., Grill, A. Materials Research Society	10 国際会議録 THE EFFECT OF OXYGEN ON THE THERMAL STABILITY OF Si1-x Gex STRAINED LAYERS GROWN BY LIMITED REACTION PROCESSING Nobel, D.B., Hoyt, J.L., Kuo, P., Nix, W.D., Gibbons, J.F., Laderman, S.S., Turner, J.E., Rosner, S.J., Scott, M.P. Materials Research Society
5 国際会議録 Strained Si-on-Insulator Fabricated From Elastically-Relaxed Si/SiGe Structures Mooney, P.M., Cohen, G.M., Chen, H., Chu, J.O., Klymko, N. Materials Research Society	11 国際会議録 Influence of He Implantation Conditions on Strain Relaxation and Threading Dislocation Density in Si0.8Ge0-2 Virtual Substrates Cai, J., Mooney, P.M., Christiansen, S.H., Chen, H., Chu, J.O., Ott, J.A. Materials Research Society
6 国際会議録 Analysis of SiGe FET Device Structures on Silicon-on-Sapphire Substrates by X-ray Diffraction Mooney, P. M., Chu, J. O., Ott, J. A., Jordan-Sweet, J. L., Dubbelday, W. B., Kavanagh, K. L., Lagnado, I., Meyerson, B. … MRS - Materials Research Society	12 国際会議録 63 Thermal Stability of a Novel Graded Layer for Relaxed SiGe/Si Heteroepitaxy Wong, L.H., Wong, C.C., Ferraris, C., White, T.J., Liu, J.P., Chan, L., Sohn, O.K., Hsia, L. C. Electrochemical Society

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