Electrical Performance and Scalability of Ni-Monosilicide Towards sub 0.13 μm Technologies | 東京工業大学附属図書館文献データベース

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Electrical Performance and Scalability of Ni-Monosilicide Towards sub 0.13 μm Technologies

著者名:

Potter, Muriel de

Lindsay, Richard

Roelandts, Nico

Vrancken, Christa

さらに 3 件

掲載資料名:

Gate stack and silicide issues in silicon processing II : symposium held April 17-19, 2001, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

670

発行年:

2002

総ページ数:

6

出版情報:

Warrendale, PA: Materials Research Society

ISSN:

02729172

ISBN:

9781558996069 [1558996060]

言語:

英語

請求記号:

M23500/670

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014553
シリーズID:	PA00000011
会議名:	Symposium On Gate Stack And Silicide Issues in Silicon Processing
回次:	2nd
会議開催地:	San Francisco, CA, USA
会議開催年:	2001.04.17-2001.04.19

類似資料:

1 国際会議録 Ni Silicide Morphology On Small Features Chamirian, Oxana, Lauwers, Anne, Kittl, Jorge A., Dal, Mark Van, Potter, Muriel De, Vrancken, Christa, Lindsay, Richard, … Materials Research Society	7 国際会議録 Effects of Alloying on Properties of NiSi for CMOS Applications Dal, Mark van, Akheyar, Amal, Kittl, Jorge A., Chamirian, Oxana, Potter, Muriel De, Demeurisse, Caroline, Lauwers, Anne, … Materials Research Society
2 国際会議録 Linewidth Dependence Of The Reverse Bias Junction Leakage For Co-Silicided Source/Drain Junctions Lauwers, Anne, Potter, Muriel de, Lindsay, Richard, Chamirian, Oxana, Demeurisse, Caroline, Vrancken, Christa, Maex, … Materials Research Society	8 国際会議録 INVITED: CHARACTERIZATION OF THE MECHANICAL STRESS MOS TECHNOLOGY INDUCED DURING SILICIDATION IN SUB 0.25 μm MOS TECHNOLOGY Steegen, A. Electrochemical Society
3 国際会議録 Ni-Silicided Deep Source/Drain Junctions Formed by Solid Phase Epitaxial Regrowth Lauwers, Anne, Lindsay, Richard, Henson, Kirklen, Severi, Simone, Akheyar, Amal, Pawlak, Bartek J., Potter, Muriel de, … Materials Research Society	9 国際会議録 The Control and Impact of Processing Ambient During RTP Maex, Karen, Kondoh, Eiichi, Lauwers, Anne, DePotter, Muriel, Prost, Joris MRS - Materials Research Society
4 国際会議録 Analysis Of Silicide/Diffusion Contact Resistance Making Use Of Transmission Line Structures Akheyar, Amal, Lauwers, Anne, Lindsay, Richard, Potter, Muriel de, Tempel, Georg, Maex, Karen Materials Research Society	10 国際会議録 20 Sidewall grooving on narrow CoSi2 lines Chamirian, O., de Potter, M, Lauwers, A., Richard, O., Lindsay, R., Vrancken, C., Moex, K. Electrochemical Society
5 国際会議録 Applications of Ni-Based Silicides to 45 nm CMOS and Beyond Kittl, Jorge A., Lauwers, Anne, Chamirian, Oxana, Pawlak, Malgorzata A., Dal, Mark Van, Akheyar, Amal, Potter, Muriel … Materials Research Society	11 国際会議録 INVITED: CHARACTERIZATION OF ThIE MECHANICAL STRESS MOS TECHNOLOGY INDUCED DURING SILICIDATION IN SUB. 0.25 pm MOS TECHNOLOGY Steegen, A. Electrochemical Society
6 国際会議録 Silicides for 65 nm CMOS and Beyond Kittl, Jorge A., Lauwers, Anne, Chamirian, Oxana, Dal, Mark Van, Akheyar, Amal, Richard, Olivier, Lisoni, Judit G., … Materials Research Society	12 国際会議録 26 Co-silicide, Co(Ni)-silicide and Ni-silicide to source¥drain contact resistance Akheyar, A., Lauwers, A., Kitti, J.A., De Potter, M, Chamirian, O., Jonckheere, R., Leunissen, P., van Dal, M, Lindsay, … Electrochemical Society

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