Blank Cover Image

Antimony and Boron Diffusion in Silicon and Silicon Germanium under the Influence of Point Defects Injection by Rapid Thermal Anneal

著者名:
Dan, Aihua
Willoughby, Arthur F.W.
Bonar, Janet M.
McGregor, Barry M.
Dowsett, Mark G.
Ormsby, Terry J.
さらに 1 件
掲載資料名:
Si front-end processing -- physics and technology of dopant-defect interactions III : symposium held April 17-19, 2001, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
669
発行年:
2001
総ページ数:
6
出版情報:
Warrendale, PA: Materials Research Society
ISSN:
02729172
ISBN:
9781558996052 [1558996052]
言語:
英語
請求記号:
M23500/669
資料種別:
国際会議録

類似資料:

1 国際会議録 Furnace And RTA Injection Of Point Defects Into CVD-Grown B Doped Si And SiGe

Bonar, Janet M., McGregor, Barry M., Cowern, Nicholas E. B., Dan, Aihua, Cooke, Graham A., Willoughby, Arthur F. W.

Materials Research Society
7 国際会議録 ANNEALING AND DIFFUSION OF BORON IN SELF-IMPLANTED SILICON BY FURNACE AND ELECTRON BEAM HEATING

Godfrey, D. J., McMahon, R. A., Hasko, D. G., Ahmed, H., Dowsett, M. G.

Materials Research Society
2 国際会議録 Effect of Point Defect Injection on B Diffusion in C Containing Si and SiGe

Karunaratne, Mudith S.A., Bonar, Janet M., Zhang, Jing, Willoughby, Arthur F.W.

Materials Research Society
8 国際会議録 Arsenic Diffusion in Si and Si0.9Ge0.1 Alloys : Effect of Defect Injection

Uppal, Suresh, Bonar, J.M., Zhang, Jing, Willoughby, A.F.W.

Materials Research Society
3 国際会議録 Effect of Carbon on Diffusion of Boron in SiGe Between 940-1050℃

Karunaratne, Mudith S.A., Bonar, Janet M., Zhang, Jing, Willoughby, Arthur F.W.

Materials Research Society
9 国際会議録 Arsenic Diffusion in Si and Si0.9Ge0.1 Alloys : Effect of Defect Injection

Uppal, Suresh, Bonar, J.M., Zhang, Jing, Willoughby, A.F.W.

Materials Research Society
4 国際会議録 Diffusion of Ion-Implanted Boron and Silicon in Germanium

Uppal, Suresh, Willoughby, A.F.W., Bonar, J.M., Cowern, N.E.B., Morris, R.J.H., Dowsett, M.G.

Materials Research Society
10 国際会議録 (14.2) 10:25 - 10:45 AM - Diffusion in SiGe: Defect Injection Studies in Sb, As and B

Bonar, J. M., Karunaratne, M. S. A., Uppal, S., Ashburn, P., Willoughby, A. F. W. (Univ. of Southampton)

Electrochemical Society
5 国際会議録 Characterization of morphology and defects in silicon-germanium virtual substrates

Dilliway, G. D. M., Willoughby, A. F. W., Bonar, J. M.

MRS-Materials Research Society
11 国際会議録 A Study of Boron Diffusion from Selectively Grown Epitaxial Silicon-Germanium into Silicon During Rapid Thermal Annealing

Yang, T.H., Chang, E.Y., Chen, K.M., Chien, C.H., Huang, H.J., Yang, T.Y., Chang, C.Y.

Electrochemical Society
6 国際会議録 The Effect of Grown-In Point Defects on Sb Diffusion in MBE-Grown Si and SiGe

Bonar, J. M., McGregor, B. M., Wiloughby, A. F. W., Paine, A. D. N.

MRS - Materials Research Society
12 国際会議録 (4.4) 7:34 - 7:37 PM - Diffusion of Ion-Implanted Boron in High Ge Content SiGe Alloys

Uppal, S., Willoughby, A. F. W., Bonar, J. M.(Univ. of Southampton)

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12