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A Quantitative Model of the Electrical Activity of Metal Silicide Precipitates in Silicon Based on the Schottky Effect

著者名:
掲載資料名:
Si front-end processing -- physics and technology of dopant-defect interactions III : symposium held April 17-19, 2001, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
669
発行年:
2001
総ページ数:
6
出版情報:
Warrendale, PA: Materials Research Society
ISSN:
02729172
ISBN:
9781558996052 [1558996052]
言語:
英語
請求記号:
M23500/669
資料種別:
国際会議録

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