Blank Cover Image

Silicon Interstitial Driven Loss of Substitutional Carbon from SiGeC Structures

著者名:
Carroll, M.S.
Sturm, J.C.
Napolitani, E.
Salvador, D. De
Berti, M.
Stangl, J.
Bauer, G.
Tweet, D.J.
さらに 3 件
掲載資料名:
Si front-end processing -- physics and technology of dopant-defect interactions III : symposium held April 17-19, 2001, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
669
発行年:
2001
総ページ数:
6
出版情報:
Warrendale, PA: Materials Research Society
ISSN:
02729172
ISBN:
9781558996052 [1558996052]
言語:
英語
請求記号:
M23500/669
資料種別:
国際会議録

類似資料:

1 国際会議録 Carbon Diffusion and Clustering in SiGeC Layers Under Thermal Oxidation

Salvador, D. De, Napolitani, E., Coati, A., Berti, M., Drigo, A.V., Carroll, M., Sturm, J.C., Stangl, J., Bauer, G., …

Materials Research Society
7 国際会議録 Quantitative Measurement of Reduction of Boron Diffusion by Substitutional Carbon Incorporation

Carroll, M. S., Lanzerotti, L. D., Sturm, J. C.

MRS - Materials Research Society
2 国際会議録 Thermal Stability and Substitutional Carbon Incorporation Far Above Soid-Solubility in Si1-xCx and Si1-x-yGexCy Layers Grown by Chemical Vaper Deposition Using …

Carroll, M.S., Sturm, J.C., Napolitani, E., Salvador, D. De

Materials Research Society
8 国際会議録 Quantitative Measurement Of Interstitial Flux And Surface Supersaturation During Oxidation Of Silicon

Carroll, Malcolm, Sturm, J.C.

Materials Research Society
3 国際会議録 Boron Diffusion and Silicon Self-Interstitial Recycling Between SiGeC Layers

Carroll, M.S., Sturm, J.C.

Materials Research Society
9 国際会議録 Threshold Voltage Stability in P-Channel MOSFETs with Heavily Boron- Doped SiGeC Gate Layers

Stewart, B., Carroll, M.S., Chang, C.L., Sturm, J.C.

Electrochemical Society
4 国際会議録 Self-interstitials and substitutional C in silicon: Interstitial- trapping and C- clustering

Mirabella, S., Scalese, S., Terrasi, A., Priolo, F., Coati, A., Salvador, D. De, Napolitani, E., Berti, M.

Materials Research Society
10 国際会議録 Quantitative Measurement of Reduction of Phosphorus Diffusion by Substitutional Carbon Incorporation

Carroll, M. S., Sturm, J. C., Chang, C-L.

MRS - Materials Research Society
5 国際会議録 Strong Deviation of the Lattice Parameter in Si1-x-yGexCy Epilayers From Vegard's Rule

Stangl, J., Zerlauth, S., Schaffler, F., Bauer, G., Berti, M., Salvador, D. De, Drigo, A. V., Romanato, F.

MRS - Materials Research Society
11 国際会議録 Mechanisms and Applications of the Control of Dopant Profiles in Silicon Using Si 1-x-y Ge xC y Layers Grown by RTCVD

Sturm, J.C., Carroll, M.S., Yang, M., Gray, J., Stewart, E.

Electrochemical Society
6 国際会議録 Boron Segregation and Electrical Properties in Polycrystalline SiGeC

Stewart, E.J., Carroll, M.S., Sturm, J.C.

Materials Research Society
12 国際会議録 Modeling of Self-Interstitial Diffusion in Implanted Molecular Beam Epitaxy Silicon

salvador, D. De, Mattoni, A., Napolitani, E., Drigo, A.V., Mirabella, S., Priolo, F.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12