Effect of the Ge Preamorphization Dose on the Thermal Evolution of End of Range Defects

Effect of the Ge Preamorphization Dose on the Thermal Evolution of End of Range Defects

著者名:

掲載資料名:

Si front-end processing -- physics and technology of dopant-defect interactions III : symposium held April 17-19, 2001, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

669

発行年:

2001

総ページ数:

6

出版情報:

Warrendale, PA: Materials Research Society

ISSN:

02729172

ISBN:

9781558996052 [1558996052]

言語:

英語

請求記号:

M23500/669

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014552
シリーズID:	PA00000011
会議名:	Symposium On Si Front-End Processing
回次:	3rd
会議開催地:	San Francisco, CA, USA
会議開催年:	2001.04.17-2001.04.19

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