Quantitative Modeling of Nucleation Kinetics in Experiments For Poly-Si Growth on SiO2 By Hot-Wire Chemical Vapor Deposition

Quantitative Modeling of Nucleation Kinetics in Experiments For Poly-Si Growth on SiO2 By Hot-Wire Chemical Vapor Deposition

著者名:

掲載資料名:

Amorphous and heterogeneous silicon-based films - 2001 : symposium held April 16-20, 2001, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

664

発行年:

2001

総ページ数:

6

出版情報:

Warrendale: Materials Research Society

ISSN:

02729172

ISBN:

9781558996007 [1558996001]

言語:

英語

請求記号:

M23500/664

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014547
シリーズID:	PA00000011
会議名:	Symposium on amorphous and heterogeneous silicon-based films
回次:	2001
会議開催地:	San Francisco, CA, USA
会議開催年:	2001.04.16-2001.04.20

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