Ferroelectric Properties of La-doped Bi4Ti3O12 Thin Films Deposited Directly on Si by Pulse-Injection MOCVD

Ferroelectric Properties of La-doped Bi4Ti3O12 Thin Films Deposited Directly on Si by Pulse-Injection MOCVD

著者名:

掲載資料名:

Ferroelectric thin films IX : symposium held November 26-30, 2000, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

655

発行年:

2001

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995659 [155899565X]

言語:

英語

請求記号:

M23500/655

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014540
シリーズID:	PA00000011
会議名:	Symposium on ferroelectric thin films
回次:	9th
会議開催地:	Boston, MA, USA
会議開催年:	2000.11.26-2000.11.30

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