Optical Properties of Aluminium and Nitrogen in Compensated 4H-SiC Epitaxial Layers

Optical Properties of Aluminium and Nitrogen in Compensated 4H-SiC Epitaxial Layers

著者名:

Syvaejaervi, Mikael

Yakimova, Rositza

Kakanakova-georgieva, Anelia

Henry, Anne

Janzen, Erik

Linnarsson, Margareta K.

さらに 1 件

掲載資料名:

Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

640

発行年:

2001

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995505 [1558995501]

言語:

英語

請求記号:

M23500/640

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014527
シリーズID:	PA00000011
会議名:	Symposium on silicon carbide-materials
回次:	2000
会議開催地:	Boston, MA, USA
会議開催年:	2000.11.27-2000.11.29

類似資料:

1 国際会議録 Defect Energetics in 4H-SiC Sublimation Epi-Layers Grown on LPE Buffers With Reduced Micropipe Density Yakimova, R., Syvaejaervi, M., Jacobsson, H., Kakanakova-Georgieva, A., Tuomi, T., Rendakova, S., Dmitriev, V., Janzen, … Materials Research Society	7 国際会議録 Domain Occurrence in SiC Epitaxial Layers Grown by Sublimation Tuominen,M., Yakimova,R., Kakanakova-Georgieva,A., MacMillan,M.F., Syvajarvi,M., Janzen,E. Trans Tech Publications
2 国際会議録 Characteristics of Boron in 4H-SiC Layers Produced by High-Temperature Techniques Kakanakova-Georgieva, A., Yakimova, R., Zhang, J., Storasta, L., Syvaejaervi, M., Janzen, E. Trans Tech Publications	8 国際会議録 Presence of Hydrogen in SiC Henry, A., Magnusson, B., Linnarsson, M.K., Ellison, A., Syvaejaervi, M., Yakimova, R., Janzen, E. Trans Tech Publications
3 国際会議録 Impact of the Initial Surface Conditions on Defect Appearance in 4H-SiC Epilayers Yakimova, R., Jacobson, H., Syvaejaervi, M., Kakanakova-Georgieva, A., Iakimov, T., Virojanadara, C., Johansson, L.I., … Trans Tech Publications	9 国際会議録 Characteristics of Boron in 4H-SiC Layers Produced by High-Temperature Techniques Kakanakova-Georgieva, A., Yakimova, R., Zhang, J., Storasta, L., Syvajarvi, M., Janzen, E. Trans Tech Publications
4 国際会議録 Characteristics of Ni Schottky Contacts on Compensated 4H-SiC Layers Kasamakova-Kolaklieva, L., Yakimova, R., Kakanakov, R., Kakanakova-Georgieva, A., Syvajarvi, M., Janzen, E. Trans Tech Publications	10 国際会議録 Impact of the Initial Surface Conditions on Defect Appearance in 4H-SiC Epilayers Yakimova, R., Jacobson, H., Syvajarvi, M., Kakanakova-Georgieva, A., Iakimov, T., Virojanadara, C., Johansson, L.I., … Trans Tech Publications
5 国際会議録 Effect of Temperature Treatment on Au/Pd Schottky Contacts to 4H-SiC Kassamakova, L., Kakanakov, R., Yakimova, R., Kakanakova-Georgieva, A., Syvaejaervi, M., Wilzen, L., Janzen, E. Trans Tech Publications	11 国際会議録 Influence of Epitaxial Layer on SiC Schottky Diode Gas Sensors Operated under High-Temperature Conditions Nakagomi, S., Shinobu, H., Uneus, L., Lundstrom, I., Ekedahl, L.-G., Yakimova, R., Syvaejaervi, M., Henry, A., Janzen, … Trans Tech Publications
6 国際会議録 High Growth Rate Epitaxy of Thick 4H-SiC Layers Syvajarvi, M., Yakimova, R., Jacobsson, H., Linnarsson, M. K., Henry, A., Janzen, E. Trans Tech Publications	12 国際会議録 High-Resolution XRD Evaluation of Thick 4H-SiC Epitaxial Layers Jacobsson, Henrik, Yakimova, R., Syvaejaervi, M., Birch, J., Tuomi, T., Janzen, E. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12