Temperature Dependences of Channel Mobility and Threshold Voltage in 4H- and 6H-SiC MOSFETs

Temperature Dependences of Channel Mobility and Threshold Voltage in 4H- and 6H-SiC MOSFETs

著者名:

Harada, S.

掲載資料名:

Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

640

発行年:

2001

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995505 [1558995501]

言語:

英語

請求記号:

M23500/640

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014527
シリーズID:	PA00000011
会議名:	Symposium on silicon carbide-materials
回次:	2000
会議開催地:	Boston, MA, USA
会議開催年:	2000.11.27-2000.11.29

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2 国際会議録 Channel Engineering of Buried-Channel 4H-SiC MOSFET Based on the Mobility Model of the Oxide/4H-SiC Interface Hatakeyama, T., Harada, S., Suzuki, S., Senzaki, J., Kosugi, R., Fukuda, K., Shinohe, T., Arai, K. Trans Tech Publications	8 国際会議録 Influence of the Wet Re-Oxidation Procedure on Inversion Mobility of 4H-SiC MOSFETs Kosugi, R., Okamoto, M., Suzuki, S., Senzaki, J., Harada, S., Fukuda, K., Arai, K. Trans Tech Publications
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4 国際会議録 Improved Channel Mobility in Normally-Off 4H-SiC MOSFETs with Buried Channel Structure Harada, S., Suzuki, S., Senzaki, J., Kosugi, R., Adachi, K., Fukuda, K., Arai, Kazuo Trans Tech Publications	10 国際会議録 Correlation between Inversion Channel Mobility and Interface Traps near the Conduction Band in SiC MOSFETs Suzuki, S., Harada, S., Kosugi, R., Senzaki, J., Fukuda, K. Trans Tech Publications
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