Fabrication of 3.4kV High Voltage n-Type 4H-SiC Schottky Barrier Diodes Using Thick Epitaxial Layers

Fabrication of 3.4kV High Voltage n-Type 4H-SiC Schottky Barrier Diodes Using Thick Epitaxial Layers

著者名:

Tsuji, Takashi

掲載資料名:

Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

640

発行年:

2001

総ページ数:

7

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995505 [1558995501]

言語:

英語

請求記号:

M23500/640

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014527
シリーズID:	PA00000011
会議名:	Symposium on silicon carbide-materials
回次:	2000
会議開催地:	Boston, MA, USA
会議開催年:	2000.11.27-2000.11.29

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1 国際会議録 IRAS Analysis of the Early Stage of Thermal Oxidation on a SiC Surface Jikimoto, Tamotsu, Tsuchida, Hidekazu, Kamata, Isaho, Izumi, Kunikazu Materials Research Society	7 国際会議録 Electroluminescence Analysis of Al+ and B+ Implanted pn Diodes Fujisawa, H., Tsuji, T., Izumi, S., Ueno, K., Kamata, I., Tsuchida, T., Jikimoto, T., Izumi, K. Trans Tech Publications
2 国際会議録 Analysis of High Leakage Currents in 4H-SiC Schottky Barrier Diodes Using Optical Beam-Induced Current Measurements Tsuji, T., Izumi, S., Ueda, A., Fujisawa, H., Ueno, K., Tsuchida, H., Kamata, I., Jikimoto, T., Izumi, K. Trans Tech Publications	8 国際会議録 Growth of Thick 4H-SiC Epilayers in a Vertical Radiant-Heating Reactor Tsuchida, H., Kamata, I., Jikimoto, T., Izumi, K. Materials Research Society
3 国際会議録 Analysis of High Leakage Currents in 4H-SiC Schottky Barrier Diodes Using Optical Beam-Induced Current Measurements Tsuji, T., Izumi, S., Ueda, A., Fujisawa, H., Ueno, K., Tsuchida, H., Kamata, I., Jikimoto, T., Izumi, K. Trans Tech Publications	9 国際会議録 Growth and Electrical Characterization of the Lightly-Doped Thick 4H-SiC Epilayers Tsuchida, H., Kamata, I., Jikimoto, T., Izumi, K. Trans Tech Publications
4 国際会議録 Characterization of 4H-SiC Epilayers Grown at a High Deposition Rate Tsuchida, H., Tsuji, T., Kamata, I., Jikimoto, T., Fujisawa, H., Ogino, S., Izumi, K. Trans Tech Publications	10 国際会議録 Growth and Electrical Characterization of the Lightly-Doped Thick 4H-SiC Epilayers Tsuchida, H., Kamata, I., Jikimoto, T., Izumi, K. Trans Tech Publications
5 国際会議録 Micropipe Closing via Thick 4H-SiC Epitaxial Growth Involving Structural Transformation of Screw Dislocations Kamata, I., Tsuchida, H., Jikimoto, T., Izumi, K. Trans Tech Publications	11 国際会議録 Improvement in Electrical Performance of Schottky Contacts for High-Voltage Diode Nakamura, T., Miyanagi, T., Tsuchida, H., Kamata, I., Jikimoto, T., Izumi, K. Trans Tech Publications
6 国際会議録 Electroluminescence Analysis of Al+ and B+ Implanted pn Diodes Fujisawa, H., Tsuji, T., Izumi, S., Ueno, K., Kamata, I., Tsuchida, T., Jikimoto, T., Izumi, K. Trans Tech Publications	12 国際会議録 LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers Tsuchida, H., Kamata, I., Jikimoto, T., Izumi, K. Trans Tech Publications

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