Physical Characterization of Residual Implant Damage in 4H-SiC Double Implanted Bipolar Technology | 東京工業大学附属図書館文献データベース

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Physical Characterization of Residual Implant Damage in 4H-SiC Double Implanted Bipolar Technology

著者名:

さらに 5 件

掲載資料名:

Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

640

発行年:

2001

総ページ数:

5

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995505 [1558995501]

言語:

英語

請求記号:

M23500/640

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014527
シリーズID:	PA00000011
会議名:	Symposium on silicon carbide-materials
回次:	2000
会議開催地:	Boston, MA, USA
会議開催年:	2000.11.27-2000.11.29

類似資料:

1 国際会議録 Effect of Residual Damage on Carrier Transport Properties in a 4H-SiC Double Implanted Bipolar Junction Transistor Ortolland, S., Wright, N.G., Johnson, C.M., Knights, A.P., Coleman, P.G., Burrows, C.P., Pidduck, A.J. Trans Tech Publications	7 国際会議録 Optimisation of a 4H-SiC Enhancement Mode Power JFET Horsfall, A.B., Johnson, C.M., Wright, N.G., O'Neill, A.G. Trans Tech Publications
2 国際会議録 Double Implanted Power MESFET Technology in 4H-SiC Horsfall, A.B., Ortolland, S., Wright, N.G., Johnson, C.M., Knights, A.P. Trans Tech Publications	8 国際会議録 Analytical Modelling of I-V Characteristics for 4H-SiC Enhancement Mode VJFET Bhatnagar, P., Horsfall, A.B., Wright, N.G., Johnson, C.M., Vassilevski, K.V., O'Neill, A.G. Trans Tech Publications
3 国際会議録 Implanted Bipolar Technology In 4H-SiC Wright, Nick G., Johnson, C.M., O'Neil, Anthony G., Horsfall, Alton, Ortolland, Sylvie, Adachi, Kazuhiro, Knights, … Materials Research Society	9 国際会議録 Optimisation of Implanted Guard-Ring Terminations in 4H-SiC Schottky Diodes Horsfall, A.B., Vassilevski, K.V., Johnson, C.M., Wright, N.G., O'Neill, A.G., Gwilliam, R.M. Trans Tech Publications
4 国際会議録 Enhanced Dopant Diffusion Effects in 4H Silicon Carbide Phelps, G.J., Wright, N.G., Chester, E.G., Johnson, C.M., O'Neill, A.G., Ortolland, S., Horsfall, A.B., Vassilevski, K., … Trans Tech Publications	10 国際会議録 Optimisation of Implanted Guard-Ring Terminations in 4H-SiC Schottky Diodes Horsfall, A.B., Vassilevski, K.V., Johnson, C.M., Wright, N.G., O'Neill, A.G., Gwilliam, R.M. Trans Tech Publications
5 国際会議録 Enhanced Dopant Diffusion Effects in 4H Silicon Carbide Phelps, G.J., Wright, N.G., Chester, E.G., Johnson, C.M., O'Neill, A.G., Ortolland, S., Horsfall, A.B., Vassilevski, K., … Trans Tech Publications	11 国際会議録 4H-SiC Schottky Diodes with High On/Off Current Ratio Vassilevski, K.V., Horsfall, A.B., Johnson, C.M., Wright, N.G., O'Neill, A.G. Trans Tech Publications
6 国際会議録 The effect of annealing on argon implanted edge terminations for 4H-SiC schottky diodes Knights, A. P., Morrison, D. J., Wright, N. G., Johnson, C. M., O'Neill, A. G., Ortolland, S., Homewood, K. P., … MRS-Materials Research Society	12 国際会議録 4H-SiC Schottky Diodes with High On/Off Current Ratio Vassilevski, K.V., Horsfall, A.B., Johnson, C.M., Wright, N.G., O'Neill, A.G. Trans Tech Publications

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