Difference in Secondary Defects Between High Energy B+ and Al+ Implanted 4H-SiC

Difference in Secondary Defects Between High Energy B+ and Al+ Implanted 4H-SiC

著者名:

掲載資料名:

Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

640

発行年:

2001

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995505 [1558995501]

言語:

英語

請求記号:

M23500/640

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014527
シリーズID:	PA00000011
会議名:	Symposium on silicon carbide-materials
回次:	2000
会議開催地:	Boston, MA, USA
会議開催年:	2000.11.27-2000.11.29

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1 国際会議録 Secondary Defect Distribution in High Energy Ion Implanted 4H-SiC Ohno, T., Kobayashi, N. Trans Tech Publications	7 国際会議録 REDUCTION OF SECONDARY DEFECTS IN HIGH ENERGY O-IMPLANTED Si BY HIGH ENERGY Si IRRADIATION Ellingboe, S.L., Ridgway, M.C. Materials Research Society
2 国際会議録 Influence of Implantation Temperature and Dose Rate on Secondary Defect Formation in 4H-SiC Ohno, T., Amemiya, K. Trans Tech Publications	8 国際会議録 Electrical Characterization of Defects Introduced in 4H-SiC During High Energy Proton Irradiation and Their Annealing Behavior Ahoujja, M., Crocket, H. C., Scott, M. B., Yeo, Y. K., Hengehold, R. L. Materials Research Society
3 国際会議録 Influence of Implantation Temperature and Dose Rate on Secondary Defect Formation in 4H-SiC Ohno, T., Amemiya, K. Trans Tech Publications	9 国際会議録 Photoluminescence Characterization of Defects Introduced in 4H-SiC During High Energy Proton Irradiation and Their Annealing Behavior Aboujja, M., Crocket, H.C., Scott, M.B., Yeo, Y.K., Hengehold, R.L. Materials Research Society
4 国際会議録 Masking Process for High-Energy and High-Temperature Ion Implantation Ohyanagi, T., Onose, H., Watanabe, A., Someya, T., Ohno, T., Amemiya, K., Kobayashi, Y. Trans Tech Publications	10 国際会議録 Hot-Implantation of Phosphorus Ions into 4H-SiC Imai, S., Kobayashi, S., Shinohe, T., Fukuda, K., Tanaka, Y., Senzaki, J., Tanoue, H., Kobayashi, N., Okushi, H. Trans Tech Publications
5 国際会議録 Masking Process for High-Energy and High-Temperature Ion Implantation Ohyanagi, T., Onose, H., Watanabe, A., Someya, T., Ohno, T., Amemiya, K., Kobayashi, Y. Trans Tech Publications	11 国際会議録 Electrical Characteristics and Surface Morphology for Arsenic Ion-Implanted 4H-SiC at High Temperature Senzaki, J., Fukuda, K., Imai, S., Tanaka, Y., Kobayashi, N., Tanoue, H., Okushi, H., Arai, K. Trans Tech Publications
6 国際会議録 Characterization Of n-Type Layer By S+ Ion Implantation In 4H-SiC Tanaka, Yasunori, Kobayashi, Naoto, Okumura, Hajime, Yoshida, Sadafumi, Hasegawa, Masataka, Ogura, Masahiko, Tanoue, … Materials Research Society	12 国際会議録 High-Energy Implantation of Boron in 4H-SiC Schoner, Adolf, Karlsson, Stefan, Schmitt, Thomas, Hallen, Anders, Frischholz, Manfred, Rottner, Kurt MRS - Materials Research Society

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