Sublimation Growth of 6H-SiC Boule on Various a-Plane Substrates

Sublimation Growth of 6H-SiC Boule on Various a-Plane Substrates

著者名:

掲載資料名:

Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

640

発行年:

2001

総ページ数:

5

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995505 [1558995501]

言語:

英語

請求記号:

M23500/640

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014527
シリーズID:	PA00000011
会議名:	Symposium on silicon carbide-materials
回次:	2000
会議開催地:	Boston, MA, USA
会議開催年:	2000.11.27-2000.11.29

類似資料:

1 国際会議録 Temperature Dependence of Sublimation Growth of 6H-SiC on (11-20) Substrates Nishiguchi, T., Masuda, Y., Ohshima, S., Nishino, S. Trans Tech Publications	7 国際会議録 The Effect of Nitrogen on Crystal Growth of SiC on (11-20) Substrates Nishiguchi, T., Masuda, Y., Ohshima, S., Nishino, S. Trans Tech Publications
2 国際会議録 Temperature Dependence of Sublimation Growth of 6H-SiC on (11-20) Substrates Nishiguchi, T., Masuda, Y., Ohshima, Satoru, Nishino, S. Trans Tech Publications	8 国際会議録 The Effect of Nitrogen on Crystal Growth of SiC on (11-20) Substrates Nishiguchi, T., Masuda, Y., Ohshima, S., Nishino, S. Trans Tech Publications
3 国際会議録 Crystal Growth of 15R-SiC Boules by Sublimation Method Nishiguchi, T., Okada, S., Sasaki, M., Harima, H., Nishino, S. Trans Tech Publications	9 国際会議録 Crystal Growth of 6H-SiC(01-14) on 3C-SiC(001) Substrate by Sublimation Epitaxy Takagi, H., Nishiguchi, T., Ohta, S., Furusho, T., Ohshima, S., Nishino, S. Trans Tech Publications
4 国際会議録 Investigation of Graphite Particle Inclusions in 6H-SiC Single Crystals Grown by Sublimation Boule Growth Technique Nishiguchi, T., Nakamura, M., Isshiki, T., Ohshima, S., Nishino, S. Trans Tech Publications	10 国際会議録 Single Crystal Growth of 6H-SiC on Saw-Damaged Substrate by Sublimation Method Okada, S., Nishiguchi, T., Shimizu, T., Sasaki, M., Oshima, S., Nishino, S. Trans Tech Publications
5 国際会議録 Mechanism for Damage Healing of Cracked 6H-SiC Substrates by the Sublimation Method Shimizu, T., Nishiguchi, T., Sasaki, M., Ohshima, S., Nishino, S. Trans Tech Publications	11 国際会議録 Crystal Growth of 15R-SiC and Various Polytype Substrates Nishiguchi, T., Shimizu, T., Sasaki, M., Oshima, S., Nishino, S. Trans Tech Publications
6 国際会議録 Uniformization of Radial Temperature Gradient in Sublimation Growth of SiC Tanaka, H., Nishiguchi, T., Sasaki, M., Ohshima, S., Nishino, S. Trans Tech Publications	12 国際会議録 Thermal Etching of 6H-SiC (11-20) Substrate Surface Nishiguchi, T., Ohshima, S., Nishino, S. Trans Tech Publications

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