Point and Planar Defect Formation in SiC During PVT Growth

Point and Planar Defect Formation in SiC During PVT Growth

著者名:

Drachev, Roman V.

Khlebnikov, Yuri I.

Rhodes, Curtis A.

Cherednichenko, Dmitry I.

Khlebnikov, Igor I.

Sudarshan, Tangali S.

さらに 1 件

掲載資料名:

Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

640

発行年:

2001

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995505 [1558995501]

言語:

英語

請求記号:

M23500/640

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014527
シリーズID:	PA00000011
会議名:	Symposium on silicon carbide-materials
回次:	2000
会議開催地:	Boston, MA, USA
会議開催年:	2000.11.27-2000.11.29

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3 国際会議録 One of Many Sources of Defect Generation in SiC Khlebnikov, Igor I., Khlebnikov, Yuri I., Wood, Colin, Sudarshan, Tangali S. Materials Research Society	9 国際会議録 Initial Stage of Crystallization in the Growth of Silicon Carbide on Substrate with Micropipes Khlebnikov, I. I., Cherednichenko, D. I., Khlebnikov, Y., Sudarshan, T. S. Trans Tech Publications
4 国際会議録 Influence of the Crystal Thickness on the SiC PVT Growth Rate Cherednichenko, D.I., Khlebnikov, Y.I., Drachev, R.V., Khlebnikov, I.I., Sudarshan, T.S. Trans Tech Publications	10 国際会議録 SiC Epitaxial Growth on Carbon Khlebnikov, I., Madangarli, V., Sudarshan, T. S. MRS - Materials Research Society
5 国際会議録 Influence of the Crystal Thickness on the SiC PVT Growth Rate Cherednichenko, D.I., Khlebnikov, Y.I., Drachev, R.V., Khlebnikov, I.I., Sudarshan, T.S. Trans Tech Publications	11 国際会議録 Dislocation Content of Etch Pits in Hexagonal Silicon Carbide Khlebnikov, Igor I., Lari, Mohsen B., Khlebnikov, Yuri I., Bondokov, Robert T., Ayyagari, Ramakrishna, Muzykov, Peter, … Materials Research Society
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