Traps at the SiC/SiO2-Interface

Traps at the SiC/SiO2-Interface

著者名:

Pensl, Gerhard

掲載資料名:

Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

640

発行年:

2001

総ページ数:

9

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995505 [1558995501]

言語:

英語

請求記号:

M23500/640

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014527
シリーズID:	PA00000011
会議名:	Symposium on silicon carbide-materials
回次:	2000
会議開催地:	Boston, MA, USA
会議開催年:	2000.11.27-2000.11.29

類似資料:

1 国際会議録 Nitrogen Implantation - An Alternative Technique to Reduce Traps at SiC/SiO2-Interfaces Ciobanu, F., Frank, T., Pensl, G., Afanas'ev, V., Shamuilia, S., Schoner, A., Kimoto, T. Trans Tech Publications	7 国際会議録 Traps at the Interface of 3C-SiC/SiO2-MOS-Structures Ciobanu, F., Pensl, G., Nagasawa, H., Schoner, A., Dimitrijev, S., Cheong, K.-Y., Afanas'ev, V.V., Wagner, G. Trans Tech Publications
2 国際会議録 SiO2/SiC Interface Properties on Various Surface Orientations Yano, Hiroshi, Hirao, Taichi, Kimoto, Tsunenobu, Matsunami, Hiroyuki Materials Research Society	8 国際会議録 SiC/SiO2 interface defects Afanas'ev, V. V. Kluwer Academic Publishers
3 国際会議録 Electrically Active Traps at the 4H-SiC/SiO2 Interface Responsible for the Limitation of the Channel Mobility Bassler, M., Afanas'ev, V. V., Pensl, G., Schulz, M. Trans Tech Publications	9 国際会議録 Low Density of Interface States in n-Type 4H-SiC MOS Capacitors Achieved by Nitrogen Implantation Ciobanu, F., Pensl, G., Afanas'ev, V., Schoner, A. Trans Tech Publications
4 国際会議録 SiC/SiO2 Interface States: Properties and Models Afanas'ev, V. V., Ciobanu, F., Dimitrijev, S., Pensl, G., Stesmans, A. Trans Tech Publications	10 国際会議録 Interface States of SiO2/SiC on (11-20) and (0001) Si Faces Yano, H., Kimoto, T., Matsunami, H. Trans Tech Publications
5 国際会議録 Epitaxial Growth of SiC on Non-Typical Orientations and MOS Interfaces Matsunami, Hiroyuki, Kimoto, Tsunenobu, Yano, Hiroshi Materials Research Society	11 国際会議録 MOSFET Performance of 4H-, 6H-, and 15R-SiC Processed by Dry and Wet Oxidation Yano, H., Kimoto, T., Matsunami, H., Bassler, M., Pensl, G. Trans Tech Publications
6 国際会議録 Interface State Density at Implanted 6H SiC/SiO2 MOS Structures Bassler,M., Afanas'ev,V.V., Pensl,G. Trans Tech Publications	12 国際会議録 Observation of Carbon Clusters at the 4H-SiC/SiO2 Interface Afanas'ev,V.V., Stesmans,A., Harris,C.I. Trans Tech Publications

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