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SiC Crystal Growth From the Vapor and Liquid Phase

著者名:
Hofmann, Dieter
Bickermann, Matthias
Epelbaum, Boris
Ebling, Dirk
Kadinski, Lev
Selder, Markus
Straubinger, Thomas
Weingaertner, Roland
Winnacker, Albrecht
Wellmann, Peter
さらに 5 件
掲載資料名:
Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
640
発行年:
2001
総ページ数:
14
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558995505 [1558995501]
言語:
英語
請求記号:
M23500/640
資料種別:
国際会議録

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1 国際会議録 Digital X-Ray Imaging of SiC PVT Process: Analysis of Crystal Growth and Powder Source Degradation

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7 国際会議録 Numerical Simulation of Thermal Stress Formation During PVT-Growth of SiC Bulk Crystals

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2 国際会議録 Impact of SiC Source Material on Temperature Field and Vapor Transport During SiC PVT Crystal Growth Process

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8 国際会議録 On-line monitoring of PVT SiC bulk crystal growth using digital X-ray imaging

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9 国際会議録 Absorption Measurements and Doping Level Evaluation in n-Type and p-Type 4H-SiC and 6H-SiC

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4 国際会議録 Study of Boron Incorporation During PVT Growth of p-type SiC Crystals

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