Fabrication of a High Power GaN Metal Semiconductor Field-Effect Transistor

Fabrication of a High Power GaN Metal Semiconductor Field-Effect Transistor

著者名:

掲載資料名:

GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

639

発行年:

2001

総ページ数:

5

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995499 [1558995498]

言語:

英語

請求記号:

M23500/639

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014526
シリーズID:	PA00000011
会議名:	Symposium on gan and related alloys
回次:	2000
会議開催地:	Boston, MA, USA
会議開催年:	2000.11.27-2000.12.01

類似資料:

1 国際会議録 A High-Power AlGaN/GaN Hetero Field-Effect Transistor Yoshida, Seikoh, Ishii, Hirotatsu Materials Research Society	7 国際会議録 High Power AlGaN/GaN Schottky Barrier Diode With 1000 V Operation Yoshida, Seikoh, Ikeda, Nariaki, Li, Jiang, Wada, Takahiro, Kambayashi, Hiroshi, Takehara, Hironari Materials Research Society
2 国際会議録 AlGaN/GaN Hetero Field-Effect Transistor for a Large Current Operation Yoshida, S., Ishii, H., Li, J. Trans Tech Publications	8 国際会議録 AlGaN/GaN Field Effect Schottky Barrier Diode for a Low Loss Switching Device Yoshida, Seikoh, Ikeda, Nariaki, Li, Jiang, Hataya, Kohji, Wada, Takahiro, Takehara, Hironari Materials Research Society
3 国際会議録 AlGaN/GaN Hetero Field-Effect Transistor for a Large Current Operation Yoshida, S., Ishii, H., Li, J. Trans Tech Publications	9 国際会議録 Electroluminescence and Photoluminescence Studies of a Nitride-Rich GaN1-xPx SQW Structure LED Grown By Laser-Assisted Metal-Organic Chemical Vapor Deposition Kikawa, Junjiroh, Yoshida, Seikoh, Itoh, Yoshiteru Materials Research Society
4 国際会議録 Enhancement Mode GaN MOSFETs on Silicon Substrates with High Field-effect Mobility Hiroshi Kambayashi, Yuki Niiyama, Shinya Ootomo, Takehiko Nomura, Masayuki Iwami, Yoshihiro Satoh, Sadahiro Kato, Seikoh … Materials Research Society	10 国際会議録 Fabrication and characterization of GaN junction field effect transistors Zhang, L., Lester, L. F., Baca, A. G., Shul, R. J., Chang, P. C., Willison, C. G., Mishra, U. K., DenBaars, S. P., … MRS-Materials Research Society
5 国際会議録 GaN Metal Oxide Semiconductor Field Effect Transistors Ren, F., Pearton, S.J., Abernathy, C.R., Baca, A.G., Cheng, P., Han, J., Shul, R.J., Chu, S.N.G., Hong, M., Lothian, … Electrochemical Society	11 国際会議録 Simulation of Self-Heating and Temperature Effect in GaN-Based Metal-Semiconductor Field-Effect Transistor Turin, Valentin D., Balandin, Alexander A. Materials Research Society
6 国際会議録 Fabrication Of Enhancement-Mode GaN-Based Metal-Insulator-Semiconductor Field Effect Transistor Chen, P., Zhang, R., Zhou, Y.G., Xie, S.Y., Luo, Z.Y., Chen, Z.Z., Li, W.P., Gu, S.L., Zheng, Y.D. Materials Research Society	12 国際会議録 High Temperature Operation of a New Normally-Off AlGaN/GaN HFET on Si Substrate Yoshida, Seikoh, Li, Jiang, Wada, Takahiro, Takehara, Hironari Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12