Blank Cover Image

Current Injection UV-Emission from InAlGaN Multi-Quantum-Well Light-Emitting Diodes

著者名:
Kinoshita, A.
Hirayama, H.
Ainoya, M.
Kim, J. S.
Hirata, A.
Aoyagi, Y.
さらに 1 件
掲載資料名:
GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
639
発行年:
2001
総ページ数:
6
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558995499 [1558995498]
言語:
英語
請求記号:
M23500/639
資料種別:
国際会議録

類似資料:

1 国際会議録 High Efficiency UV-Emission at 345 nm from InAlGaN Light-Emitting Diodes

Kinoshita, A., Hirayama, H., Ainoya, M., Yamabi, T., Hirata, A., Aoyagi, Y.

Materials Research Society
7 国際会議録 Optical properties of AlGaN quantum well structures

Hirayama, H., Enomoto, Y., Kinoshita, A., Hirata, A., Aoyagi, Y.

MRS-Materials Research Society
2 国際会議録 High Efficiency UV-Emission at 345 nm from InAlGaN Light-Emitting Diodes

Kinoshita, A., Hirayama, H., Ainoya, M., Yamabi, T., Hirata, A., Aoyagi, Y.

Materials Research Society
8 国際会議録 Drastic Reduction of Threading Dislocation Density of AlGaN on SiC Wafer by Using Highly-Si-Incorporated AlGaN Superlattice

Hirayama, Hideki, Ainoya, Makoto, Kinoshita, Atsuhiro, Hirata, Akira, Aoyagi, Yoshinobu

Materials Research Society
3 国際会議録 Investigation of the Optimum Growth Conditions of Wide-Bandgap Quaternary InAlGaN for UV-LEDs

Yamabi, T., Kinoshita, A., Hirayama, H., Ainoya, M., Hirata, A., Araki, T., Nanishi, Y., Aoyagi, Y.

Materials Research Society
9 国際会議録 Quaternary InAlGaN-based deep-UV LED with high-Al-content p-type AlGaN

Hirayama, H., Aoyagi, Y.

SPIE - The International Society of Optical Engineering
4 国際会議録 Emission enhancement of GaN/AlGaN single-quantum-wells due to screening of piezoelectric field

Kinishita, A., Hirayama, H., Riblet, P., Ainoya, M., Hirata, A., Aoyagi, Y.

MRS-Materials Research Society
10 国際会議録 Optical Properties of Si-Doped AlxGa1-xN/AlyGa1-yN (x = 0.24-0.53, y = 0.11) Multi-Quantum-Well Structures

Hirayama, H., Aoyagi, Y.

MRS - Materials Research Society
5 国際会議録 Fabrication of p-n Junction with Mg-Doped Wide Bandgap InAlGaN for Application to UV Emitters

Hirayama, H., Yamanaka, T., Kinoshita, A., Hiraoka, K., Hirata, A., Aoyagi, Y.

Materials Research Society
11 国際会議録 Properties of InGaN/AlInGaN/AlGaN quantum-well UV light-emitting diodes

Lee, J., Eliseev, P.G., Osinski, M., Lee, D.-S., Florescu, D.I., Guo, S., Pophristic, M.

SPIE-The International Society for Optical Engineering
6 国際会議録 In Segregation Effects on Optical and Doping Properties of InAlGaN Quaternary for UV Emitting Devices

Hirayama, Hideki, Kinoshita, Atsuhiro, Yamanaka, Takuya, Hirata, Akira, Aoyagi, Yoshinobu

Materials Research Society
12 国際会議録 Convergence of optical spectroscopic system for characterization of InGaN/GaN multi-quantum well light-emitting diodes

J. Park, D. Lee, S. Hong, J. Kim, B. Kim

SPIE - The International Society of Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12