Preliminary Characterization of GaN MBE Epitaxial Layers Grown on Nanoporous 6H-SiC Substrates | 東京工業大学附属図書館文献データベース

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Preliminary Characterization of GaN MBE Epitaxial Layers Grown on Nanoporous 6H-SiC Substrates

著者名:

Gopalkrishna, A.

さらに 4 件

掲載資料名:

GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

639

発行年:

2001

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995499 [1558995498]

言語:

英語

請求記号:

M23500/639

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014526
シリーズID:	PA00000011
会議名:	Symposium on gan and related alloys
回次:	2000
会議開催地:	Boston, MA, USA
会議開催年:	2000.11.27-2000.12.01

類似資料:

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2 国際会議録 Comparative Analysis of MBE-Grown GaN Films on SiC, ZnO and LiGaO2 Substrates Yun, F., Reshchikov, M.A., He, L., King, T., Huang, D., Morkoc, H., Nause, Jeff, Cantwell, Gene, Maruska, H. Paul, … Materials Research Society	8 国際会議録 Characterization of GaN epitaxial films grown on SiNx and TiNx porous network templates (Invited Paper) [6121-11] Xie, J., Fu, Y., Ozgur, U., Moon, Y. T., Yun, F., Morkoc, H., Everitt, H. O., Sagar, A., Feenstra, R. M., Inoki, C. K., … SPIE - The International Society of Optical Engineering
3 国際会議録 Characterization Of Thin GaN Layers Deposited By Hydride Vapor Phase Epitaxy (HVPE) On 6H-SiC Substrates Wolan, John T., Koshka, Yaroslav, Saddow, S.E., Melnik, Yu V., Dmitriev, V. Materials Research Society	9 国際会議録 GaN Epitaxial Growth by Molecular Beam Epitaxy Utilizing AlGaN Buffer Layer With Nanopipes Yun, F., He, L., Reshchikov, M. A., Morkoc, H., Jasinski, J., Liliental-Weber, Z. Materials Research Society
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